XRD characterization of ZnO layers grown on GaAs(111)B, c-plane and a-plane sapphire substrates by plasma-assisted MBE

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 7, Issue 6, 2010, Pages 1556-1558

  Muranaka, Tsutomu ^a   Sakano, Tatsumi ^a   Mizuguchi, Keiichi ^a   Nabetani, Yoichi ^a   Akitsu, Tetsuya ^a   Matsumoto, Takashi ^a   Hagihara, Shigeru ^b   Abe, Osamu ^b   Hiraki, Satoshi ^c   Fujikawa, Yuichiro ^c  

^a UNIVERSITY OF YAMANASHI   (Japan)

^b Yamanashi Prefectural Industrial Technology Center   (Japan)

^c Nakaya Corporation   (Japan)

Author keywords

Microstructure; PAMBE; Strain; XRD; ZnO

Indexed keywords

A-PLANE; A-PLANE SAPPHIRE; EPITAXIAL RELATIONSHIPS; GAAS; HIGH RESOLUTION X RAY DIFFRACTION; IN-PLANE; IN-PLANE COMPRESSIVE STRAIN; LATTICE PARAMETERS; PLASMA-ASSISTED MBE; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; RECIPROCAL LATTICE MAPPING; STRUCTURAL EVALUATION; XRD; ZNO; ZNO FILMS; ZNO LAYERS;

ALUMINUM; CRYSTAL GROWTH; GALLIUM ARSENIDE; MICROSTRUCTURE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; SAPPHIRE; SEMICONDUCTING GALLIUM; STRAIN; SUBSTRATES; X RAY DIFFRACTION; ZINC OXIDE;

GALLIUM ALLOYS;

EID: 77955449077     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200983209     Document Type: Conference Paper

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