InGaN/GaN multi-quantum well and LED growth on wafer-bonded sapphire-on-polycrystalline AlN substrates by metalorganic chemical vapor deposition

Journal of Crystal Growth

Volumn 310, Issue 10, 2008, Pages 2514-2519

  Pinnington, T ^a   Koleske, D D ^b   Zahler, J M ^a   Ladous, C ^a   Park, Y B ^a   Crawford, M H ^b   Banas, M ^b   Thaler, G ^b   Russell, M J ^b   Olson, S M ^a   Atwater, Harry A ^a,c  

^a Aonex Technologies   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

^c California Institute of Technology   (United States)

Author keywords

A1. Substrates; A3. Metalorganic vapor phase epitaxy; B1. Nitrides; B1. Sapphire; B2. Semiconducting III V materials; B3. Light emitting diodes

Indexed keywords

CHEMICAL VAPOR DEPOSITION; LIGHT EMITTING DIODES; POLYCRYSTALLINE MATERIALS; THERMAL EXPANSION;

COEFFICIENT OF THERMAL EXPANSION (CTE); MULTI-QUANTUM WELL (MQW);

SEMICONDUCTOR QUANTUM WELLS;

EID: 42249088415     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.01.022     Document Type: Article

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