Ion beam mixing for processing of nanostructure materials

Journal of Electronic Materials

Volumn 35, Issue 5, 2006, Pages 834-839

  Abedrabbo, S ^a   Arafah, D E ^a   Gokce, O ^b   Wielunski, L S ^c,d   Gharaibeh, M ^a   Celik, O ^d   Ravindra, N M ^b  

^a UNIVERSITY OF JORDAN   (Jordan)

^b NEW JERSEY INSTITUTE OF TECHNOLOGY   (United States)

^c RUTGERS UNIVERSITY   (United States)

^d RUTGERS UNIVERSITY   (United States)

Author keywords

Ion beam mixing (IBM); Oxidation; SiGe

Indexed keywords

GERMANIUM OXIDE; SHALLOW DEFECTS; SIGE;

ARGON; FOURIER TRANSFORM INFRARED SPECTROSCOPY; GERMANIUM COMPOUNDS; ION BEAMS; ION IMPLANTATION; IRRADIATION; MICROELECTRONICS; MIXING; OPTOELECTRONIC DEVICES; OXIDATION; OXYGEN; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON ALLOYS; THERMOLUMINESCENCE; THIN FILMS;

NANOSTRUCTURED MATERIALS;

EID: 33745015585     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF02692536     Document Type: Conference Paper

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