Heteroepitaxial growth of tungsten oxide films on silicon(100) using a BaF2 buffer layer

Journal of Materials Research

Volumn 18, Issue 12, 2003, Pages 2859-2868

  Doucette, L D ^a   Santiago, F ^b   Moran, S L ^b   Lad, R J ^a  

^a UNIVERSITY OF MAINE   (United States)

^b NAVAL SURFACE WARFARE CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BARIUM COMPOUNDS; CYCLOTRON RADIATION; DEPOSITION; ELECTROCHROMIC DEVICES; ELECTRONIC EQUIPMENT; EVAPORATION; FILM GROWTH; MICROSTRUCTURE; SEMICONDUCTOR MATERIALS; SENSORS; SILICON; THERMODYNAMICS; TUNGSTEN COMPOUNDS; WEAR OF MATERIALS;

BUFFER LAYERS; SEMICONDUCTING METAL OXIDE (SMO);

THIN FILMS;

EID: 0742268859     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/JMR.2003.0399     Document Type: Article

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