A solar-blind β-Ga2O33 Nanowire Photodetector

IEEE Photonics Technology Letters

Volumn 22, Issue 10, 2010, Pages 709-711

  Weng, W Y ^a   Hsueh, T J ^b   Chang, S J ^a   Huang, G J ^a   Chang, S P ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

Ga2O33; Nanowires; Photodetector; Solar blind

Indexed keywords

APPLIED BIAS; AVERAGE LENGTH; CONTACT ELECTRODES; GAN-SAPPHIRE; INCIDENT LIGHT; RESPONSIVITY; SOLAR-BLIND;

GALLIUM; NANOWIRES; OPTOELECTRONIC DEVICES;

PHOTODETECTORS;

EID: 77951581137     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2010.2044570     Document Type: Article

References (19)

1. xNy-GaN buffer layer, " IEEE J. Quantum Electron., vol. 44, no. 10, pp. 916-921, Oct. 2008.
2. J. Pereiro, C. Rivera, A. Navarro, E. Munoz, R. Czernecki, S. Grzanka, and M. Leszczynski, "Optimization of InGaN-GaN MQW photodetector structures for high-responsivity performance, " IEEE J. Quantum Electron., vol. 45, no. 6, pp. 617-622, Jun. 2009.
3. 1-xN-based p-i-n solar-blind ultraviolet photodetectors, " IEEE J. Quantum Electron., vol. 37, no. 4, pp. 538-545, Apr. 2001.
4. 3 sensors for reducing gases, " Sens. Actuators B, vol. 18, pp. 119-124, 1994.
5. 3 phosphors for thin-film electroluminescent devices, " Jpn. J. Appl. Phys., Part 2, vol. 36, pp. L1191-L1194, 1997.
6. 3 single crystals, " Appl. Phys. Lett., vol. 70, pp. 3561-3562, 1997.
7. 3, " Appl. Phys. Lett., vol. 88, 2006, Article 092106.
8. 3 thin films for ultraviolet photodetectors, " Appl. Phys. Lett., vol. 90, 2007, Article 031912.
9. C. Soci, A. Zhang, B. Xiang, S. A. Dayeh, D. P. R. Aplin, J. Park, X. Y. Bao, Y. H. Lo, and D. Wang, "ZnO nanowire UV photodetectors with high internal gain, " Nano Lett., vol. 7, pp. 1003-1009, 2007.
10. R. S. Chen, T. H. Yang, H. Y. Chen, L. C. Chen, K. H. Chen, Y. J. Yang, C. H. Su, and C. R. Lin, "High-gain photoconductivity in semiconducting InN nanowires, " Appl. Phys. Lett., vol. 95, 2009, Article 162112.
11. 3 nanowires as solar-blind photodetectors, " Appl. Phys. Lett., vol. 88, 2006, Article 153107.
12. S. J. Chang, C. H. Kuo, Y. K. Su, L. W. Wu, J. K. Sheu, T. C. Wen, W. C. Lai, J. F. Chen, and J. M. Tsai, "400-nm InGaN-GaN and InGaN-AlGaN multiquantum well light-emitting diodes, " IEEE J. Sel. Topics Quantum Electron., vol. 8, no. 4, pp. 744-748, Jul/Aug. 2002.
13. S. J. Chang, W. C. Lai, Y. K. Su, J. F. Chen, C. H. Liu, and U. H. Liaw, "InGaN-GaN multiquantum-well blue and green light-emitting diodes, " IEEE J. Sel. Topics Quantum Electron., vol. 8, no. 2, pp. 278-283, Mar./Apr. 2002.
14. M. Paulose, O. K. Varghese, and C. A. Grimes, "Synthesis of goldsilica composite nanowires through solid-liquid-solid phase growth, " J. Nanosci. Nanotechnol, vol. 3, pp. 341-346, 2003.
15. O. Ambacher, M. S. Brandt, R. Dimitrov, T. Metzger, M. Stutzmann, R. A. Fischer, A. Miehr, A. Bergmaier, and G. Dollinger, "Thermal stability and desorption of Group III nitrides prepared by metalorganic chemical vapor deposition, " J. Vac. Sci. Technol. B, vol. 14, pp. 3532-3542, 1996.
16. C. H. Hsiao, S. J. Chang, S. B. Wang, S. P. Chang, T. C. Li, W. J. Lin, C. H. Ko, T. M. Kuan, and B. R. Huang, "ZnSe nanowire photodetector prepared on oxidized silicon substrate by molecular-beam epitaxy, " J. Electrochem. Soc, vol. 156, pp. J73-76, 2009.
17. J. A. Garrido, E. Monroy, I. Izpura, and E. Munoz, "Photoconductive gain modelling of GaN photodetectors, " Semicond. Sci. Technol, vol. 13, pp. 563-568, 1998.
18. 2 nanowires, " Appl. Phys. Lett., vol. 93, 2008, Article 112115.
19. 3 nanowires by ultraviolet illumination, " Appl. Phys. Lett., vol. 89, 2006, Article 112114.