Electronic interface properties of silicon substrates after ozone based wet-chemical oxidation studied by SPV measurements

Applied Surface Science

Volumn 258, Issue 21, 2012, Pages 8387-8396

  Angermann, Heike ^a   Wolke, Klaus ^b   Gottschalk, Christiane ^c   Moldovan, Ana ^d   Roczen, Maurizio ^a   Fittkau, Jens ^c   Zimmer, Martin ^d   Rentsch, Jochen ^d  

^a HAHN MEITNER INSTITUT   (Germany)

^b Technologie Consulting Wolke   (Germany)

^c ASTeX GmbH   (Germany)

^d FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

Author keywords

H termination; Interface states; Ozone; Silicon solar cell substrates; Surface photovoltage; Wet chemical oxidation

Indexed keywords

CHEMICAL CLEANING; ELECTRONIC PROPERTIES; HYDROFLUORIC ACID; HYDROGEN; INTERFACE STATES; INTERFACES (MATERIALS); MONOCRYSTALLINE SILICON; OXIDATION; OZONE; OZONE LAYER; SILICON OXIDES; SILICON SOLAR CELLS; SURFACE PROPERTIES;

H-TERMINATION; HYDROGEN-TERMINATED SUBSTRATES; HYDROGEN-TERMINATED SURFACES; SOLAR CELL SUBSTRATES; SUBSTRATE SURFACE MORPHOLOGY; SURFACE PHOTOVOLTAGE TECHNIQUE; SURFACE PHOTOVOLTAGES; WET CHEMICAL OXIDATION;

SUBSTRATES;

EID: 84862856680     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2012.03.170     Document Type: Conference Paper

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