Very high quality thin gate oxide formation technology

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 13, Issue 3, 1995, Pages 1665-1670

  Ohmi, Tadahiro ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

FOURIER TRANSFORM INFRARED; GATE OXIDATION; HIGH QUALITY; NEW APPROACHES; ORGANIC CONTAMINATION; OXIDE GROWTH; PASSIVATION LAYER; PREOXIDE; RESIDUAL WATERS; THIN GATE OXIDES; ULTRA-PURE WATER; WAFER SURFACE;

PASSIVATION;

GATES (TRANSISTOR);

EID: 21844524329     PISSN: 07342101     EISSN: 15208559     Source Type: Journal    
DOI: 10.1116/1.579748     Document Type: Article

References (12)

1. K. Makimura, A. Teramoto, K. Nakamura, M. Y. Kwon, M. Morita, and T. Ohmi, Jpn. J. Appl. Phys. 32, 294 (1993).
2. J. Takono, K. Makihara, and T. Ohmi, Mater. Res. Soc. Symp. Proc. 315, 381 (1993).
3. M. Morita, T. Ohmi, and E. Hasegawa, Solid-State Electron. 33, 143 (1990).
4. T. Ohmi, M. Morita, A. Teramoto, K. Makihara, and T. S. Tseng, Appl. Phys. Lett. 60, 2126 (1993).
5. K. Ohmi, K. Nakamura, T. Futatsuki, and T. Ohmi, 1994 Symposium on VLSI Technology (unpublished), p. 109.
6. T. Ohmi, K. Nakamura, and K. Makihara, Proceedings of the International Relativity Physics Symposium, 1994 (unpublished), p. 161.
7. T. Ohmi, M. Miyashita, M. Itano, T. Imaoka, and I. Kawanabe, IEEE Trans. Electron Devices ED-39, 538 (1992).
8. M. Itano, F. W. Kern, R. W. Rosenberg, M. Miyashita, I. Kawanabe, and T. Ohmi, IEEE Trans. Semicond. Manuf. SM-5, 114 (1992).
9. Y. Kawai, N. Konishi, J. Watanabe, and T. Ohmi, Appl. Phys. Lett. 64, 2223 (1994).
10. H. H. Goto, H. D. Lowe, and T. Ohmi, IEEE Trans. Semicond. Manuf. SM-6, 58 (1993).
11. F. Kunimoto, T. Ohmi, and F. W. Kern, Jr., Proceedings of the IES 39th Annual Technical Meeting, 1993 (unpublished), p. 245.
12. N. Yonekawa, S. Yasui, F. Kunimoto, F. W. Kern, Jr., and T. Ohmi, Extended Abstracts of The Electrochemical Society, (The Electrochemical Society, Pennington, NJ, 1993), Vol. 93–2, p. 569.