Using dissolved ozone in semiconductor cleaning applications

MICRO

Volumn 22, Issue 2, 2004, Pages 81-89

  Gottschalk, Christiane ^a,c   Schweckendiek, Juergen ^b  

^a MKS Instruments   (United States)

^b ASTEC ^*  (Germany)

^c MKS Instruments Deutschland GmbH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ADVANCED CLEANING AND DRYING (ACD) METHOD; DISSOLVED OZONE;

CRYSTALS; ELECTRIC DISCHARGES; ETCHING; OZONE; PHOTORESISTS; SILICON WAFERS; ULTRAVIOLET RADIATION; WASTEWATER;

INTEGRATED CIRCUIT MANUFACTURE;

EID: 1842583878     PISSN: 10810595     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (21)

1. C Gottschalk, A Libra, and A Saupe, Ozonation of Water and Waste Water - A Practical Guide to Understanding Ozone and Its Application (Weinheim, Germany: Wiley-VCH, 2000).
2. SL Nelson, "The Effect of Oxygen Passivation of Silicon by Wet Cleaning Processes on Contamination and Defects," in Proceedings of the Electrochemical Society 35 (Pennington, NJ: Electrochemical Society, 1997), 38-45.
3. F De Smedt, C Vinckier, and G Gilis, "Ultra-Thin Oxide Growths on Silicon Using Ozonated Solutions," in Proceedings of the Fourth International Symposium on Ultra Clean Processing of Silicon Surfaces (UCPSS) (Leuven, Belgium: Acco, 1998), 81-84.
4. ED Olson et al., "Alternatives to Standard Wet Cleans," Semiconductor International 23, no. 9 (2000): 70-76.
5. E Bergman and S Lagrange, "HF-Ozone Cleaning Chemistry," Solid State Technology 46, no. 7 (2001): 115-124.
6. F Tardif et al., "New Aspects of the Diluted Dynamic Clean Process," in Proceedings of the Fourth International Symposium on Ultra Clean Processing of Silicon Surfaces (UCPSS) (Leuven, Belgium: Acco, 1998), 19-22.
7. 3/Megasonics Cleaning," Solid State Phenomena 65-66 (1999): 27-30.
8. T Ohmi, "Total Room Temperature Wet Cleaning of Silicon Surfaces," Semiconductor International 19, no. 8 (1996): 323-338.
9. T Hattori, "Implementing a Single-Wafer Cleaning Technology Suitable for Minifab Operations," MICRO 21, no. 1 (2003): 49-57.
10. S Nelson, "Reducing Environmental Impact with Ozone Based Processes," in Proceedings of the Electrochemical Society 6 (Pennington, NJ: Electrochemical Society, 2001), 126-133.
11. S De Gendt, J Wauters, and M Heyns, "A Novel Resist and Post-Etch Residue Removal Process Using Ozonated Chemistry," Solid State Technology 41, no. 12 (1998): 57-60.
12. S De Gendt et al., "A Novel Resist and Post-Etch Residue Removal Process Using Ozonated Chemistry," Solid State Phenomena 65-66 (1999): 165-168.
13. S Nelson and L Carter, "A Process Using Ozonated Water Solutions to Remove Photoresist after Metallization," Solid State Phenomena 65-66 (1999): 287-290.
14. 3 Resist Stripping," in Proceedings of the Electrochemical Society 35 (Pennington, NJ: Electrochemical Society, 1997), 480-487.
15. The International Technology Roadmap for Semiconductors (San Jose: Semiconductor Industry Association, 2003); available from Internet: http://public.itrs.net.
16. T Boswell, D Caravageli, and SJ Hardwick, "Ozone Injection System for Bacterial Control and Sterilization in High-Purity Water," Ultrapure Water (January 2002): 40-45.
17. H Chick (1908): "An Investigation of the Laws in Disinfection," Journal of Hygiene 8 (1908): 92-158.
18. Ozone Effects on Specific Bacteria, Viruses, and Molds [online] (Sioux Center, IA: Ozone Solutions [cited 13 January 2004]); available from Internet: http://www.ozonesolutions.info/info/ozone_bacteria_mold_viruses.htm.
19. MM Heyns et al., "Advanced Wet and Dry Cleaning Coming Together for Next Generation," Solid State Technology 42, no. 3 (1999): 37-47.
20. T Ohmi, "Total Room Temperature Wet Cleaning for Si Substrate Surface," Journal of the Electrochemical Society 143, no. 9 (1996): 2957-2964.
21. J Barnett et al., (2003): "Improvements in Advanced Gate Oxide Electrical Performance by the Use of an Ozonated Water Clean Process," in Proceedings of the Semiconductor Pure Water and Chemicals Conference (San Jose: SPWCC, 2003), 64-73.