Boron Nitride Nanomesh

Science

Volumn 303, Issue 5655, 2004, Pages 217-220

  Corso, Martina ^a   Auwärter, Willi ^a   Muntwiler, Matthias ^a   Tamai, Anna ^a   Greber, Thomas ^a   Osterwalder, Jürg ^a  

^a UNIVERSITY OF ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE MATERIALS; HIGH TEMPERATURE EFFECTS; MOLECULAR DYNAMICS; MOLECULAR ORIENTATION; NANOSTRUCTURED MATERIALS; SELF ASSEMBLY; THERMODYNAMIC STABILITY;

LATTICE MISMATCH;

BORON COMPOUNDS;

BORON DERIVATIVE; NANOPARTICLE; RHODIUM;

BORON;

ARTICLE; EXPOSURE; HIGH TEMPERATURE; MATERIALS; PRIORITY JOURNAL; SURFACE PROPERTY; THERMOSTABILITY;

EID: 0347986857     PISSN: 00368075     EISSN: None     Source Type: Journal    
DOI: 10.1126/science.1091979     Document Type: Article

References (18)

1. J. J. Pouch, S. Alterovitz, Synthesis and Properties of Boron Nitride (Trans Tech Publications, Enfield, NH, 1990).
2. F. Banhart, M. Zwanger, H.-J. Muhr, Chem. Phys. Lett. 231, 98 (1994).
3. N. G. Chopra et al., Science 269, 966 (1995).
4. E. Bengu, L. D. Marks, Phys. Rev. Lett. 86, 2385 (2001).
5. A. Nagashima, N. Tejima, Y. Gamou, T. Kawai, C. Oshima, Phys. Rev. Lett. 75, 3918 (1995).
6. A. Nagashima et al., Phys. Rev. B 51, 4606 (1995).
7. W. Auwärter, T. J. Kreutz, T. Greber, J. Osterwalder, Surf. Sci. 429, 229 (1999).
8. T. Greber et al., Surf. Rev. Lett. 9, 1243 (2002).
9. G. B. Grad, P. Blaha, K. Schwarz, W. Auwärter, T. Greber, Phys. Rev. B 68, 085404 (2003).
10. Y. Gamou, M. Terai, A. Nagashima, C. Oshima, Sci. Rep. Res. Inst. Tohoku Univ. Ser. A 44, 211 (1997).
11. M. Muntwiler et al., Surf Sci. 472, 125 (2001).
12. W. Auwärter, M. Muntwiler, J. Osterwalder, T. Greber, Surf Sci. 545, L735 (2003).
13. M. Gsell, P. Jakob, D. Menzel, Science 280, 717 (1998).
14. A. Nagashima, N. Tejima, C. Oshima, Phys. Rev. B 50, 17487 (1994).
15. A. Nagashima, Y. Gamou, M. Terai, M. Wakabayashi, C. Oshima, Phys. Rev. B 54, 13491 (1996).
16. S. Helveg et al., Phys. Rev. Lett. 84, 951(2000).
17. The low corrugation observed in the constant-current STM images of the nanomesh provides a strong argument against the incorporation of Rh atoms into the mesh structure and substrate etching below the nanomesh.
18. We thank H. Sachdev for providing us the borazine, E. Stoll for generating the three-dimensional figure of the nanomesh, and M. Klöckner for technical assistance. Supported by the Swiss National Science Foundation.