Effects of small specimen tilt and probe convergence angle on ADF-STEM image contrast of Si 0.8Ge 0.2 epitaxial strained layers on (100) Si

Ultramicroscopy

Volumn 114, Issue , 2012, Pages 46-55

  Wu, X ^a   Robertson, M D ^b   Kawasaki, M ^c   Baribeau, J M ^a  

^a NATIONAL RESEARCH COUNCIL CANADA   (Canada)

^b ACADIA UNIVERSITY   (Canada)

^c JEOL USA INC   (United States)

Author keywords

Annular dark field scanning transmission electron microscopy; Semiconductor heteroepitaxial strained layers

Indexed keywords

ADF-STEM; ANNULAR DARK FIELD SCANNING TRANSMISSION ELECTRON MICROSCOPY; ATOMIC COLUMNS; COMPOSITION CHANGES; CONVERGENCE ANGLE; DARK FIELD; HETEROEPITAXIAL; HIGH RESOLUTION; IMAGE CONTRASTS; IMAGE INTENSITIES; IMAGE SIMULATIONS; LATTICE IMAGES; LAYER STRUCTURES; MISFIT STRAINS; MULTI SLICES; SCANNING TRANSMISSION ELECTRON MICROSCOPES; SI LAYER; SIGNAL TO NOISE; SMALL SPECIMEN; SPECIMEN THICKNESS; STRAINED LAYERS; ZONE-AXIS ORIENTATIONS;

EPITAXIAL GROWTH; GERMANIUM; PROBES; SILICON; TRANSMISSION ELECTRON MICROSCOPY;

SEMICONDUCTING SILICON;

ANNULAR DARK FIELD SCANNING TRANSMISSION ELECTRON MICROSCOPY; ARTICLE; IMAGE INTENSITY; PHYSICAL PARAMETERS; PROBE CONVERGENCE ANGLE; SCANNING ELECTRON MICROSCOPE; SCANNING TRANSMISSION ELECTRON MICROSCOPY; SIGNAL NOISE RATIO; SIMULATION; SPECIMEN TILT; SURFACE PROPERTY; THICKNESS;

EID: 84862825765     PISSN: 03043991     EISSN: 18792723     Source Type: Journal    
DOI: 10.1016/j.ultramic.2012.01.001     Document Type: Article

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