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Volumn 282, Issue 1-2, 2005, Pages 18-28
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Strain relaxation in GaNyAs1-y films on (1 0 0) GaAs
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Author keywords
A1. Strain relaxation; A1. Transmission electron microscopy; A3. Molecular beam epitaxy; B2. Semiconducting III V materials
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Indexed keywords
ANISOTROPY;
MOLECULAR BEAM EPITAXY;
MORPHOLOGY;
NUCLEATION;
SEMICONDUCTING FILMS;
SEMICONDUCTING GALLIUM ARSENIDE;
TRANSMISSION ELECTRON MICROSCOPY;
X RAY DIFFRACTION;
BANDGAP ENERGY;
PARTIAL DISLOCATIONS;
SEMICONDUCTING III-IV MATERIALS;
STRAIN RELAXATION;
GALLIUM ALLOYS;
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EID: 22644433496
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2005.04.081 Document Type: Article |
Times cited : (6)
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References (25)
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