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Volumn 282, Issue 1-2, 2005, Pages 18-28

Strain relaxation in GaNyAs1-y films on (1 0 0) GaAs

Author keywords

A1. Strain relaxation; A1. Transmission electron microscopy; A3. Molecular beam epitaxy; B2. Semiconducting III V materials

Indexed keywords

ANISOTROPY; MOLECULAR BEAM EPITAXY; MORPHOLOGY; NUCLEATION; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM ARSENIDE; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

EID: 22644433496     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.04.081     Document Type: Article
Times cited : (6)

References (25)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.