Effect of annealing temperature on the properties of pulsed magnetron sputtered nanocrystalline Ag:SnO 2 films

Materials Chemistry and Physics

Volumn 133, Issue 2-3, 2012, Pages 1024-1028

  Reddy, A Sivasankar ^a,b   Figueiredo, N M ^a   Cho, H C ^b   Lee, K S ^b   Cavaleiro, A ^a  

^a UNIVERSITY OF COIMBRA   (Portugal)

^b Kongju National University   (South Korea)

Author keywords

Crystal structure; Electrical properties; Nanostructures; Sputtering; Thin films

Indexed keywords

ANALYTICAL TECHNIQUES; ANNEALING TEMPERATURES; AS-DEPOSITED FILMS; AVERAGE GRAIN SIZE; DOUBLE-BEAM; ELECTRICAL AND OPTICAL PROPERTIES; ELECTRICAL RESISTIVITY; FOUR-POINT PROBE; GLASS SUBSTRATES; NANOCRYSTALLINE AG; PREFERENTIAL ORIENTATION; PULSED DC MAGNETRON SPUTTERING; THERMAL ANNEALING TREATMENT; XRD;

ATOMIC FORCE MICROSCOPY; CRYSTAL STRUCTURE; ELECTRIC CONDUCTIVITY; ELECTRIC PROPERTIES; ELECTRON PROBE MICROANALYSIS; NANOSTRUCTURES; OPTICAL PROPERTIES; SCANNING ELECTRON MICROSCOPY; SILVER; SPUTTERING; SUBSTRATES; X RAY DIFFRACTION;

ANNEALING;

EID: 84862798579     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matchemphys.2012.02.011     Document Type: Article

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