-
1
-
-
0023326828
-
Mechanism of semiconductor gas sensor operation
-
S.R. Morrison, Mechanism of semiconductor gas sensor operation, Sensors and Actuators 11 (1987) 283-287.
-
(1987)
Sensors and Actuators
, vol.11
, pp. 283-287
-
-
Morrison, S.R.1
-
2
-
-
0022813396
-
Selectivity in semiconductor gas sensors
-
S.R. Morrison, Selectivity in semiconductor gas sensors, Sensors and Actuators 12 (1987) 425-440.
-
(1987)
Sensors and Actuators
, vol.12
, pp. 425-440
-
-
Morrison, S.R.1
-
3
-
-
0025235638
-
The role of noble metals in the chemistry of solidstate gas sensors
-
D. Kohl, The role of noble metals in the chemistry of solidstate gas sensors, Sensors and Actuators B 1 (1990) 158-165.
-
(1990)
Sensors and Actuators B
, vol.1
, pp. 158-165
-
-
Kohl, D.1
-
4
-
-
0024091105
-
Electronic interaction between metal additives and tin dioxide in tin dioxide-based gas sensors
-
S. Matsyshima, Y. Teraoka, N. Miura, N. Yamazoe, Electronic interaction between metal additives and tin dioxide in tin dioxide-based gas sensors, Jpn. J. Appl. Phys. 27 (10) (1988) 1798-1802.
-
(1988)
Jpn. J. Appl. Phys.
, vol.27
, Issue.10
, pp. 1798-1802
-
-
Matsyshima, S.1
Teraoka, Y.2
Miura, N.3
Yamazoe, N.4
-
6
-
-
0000083291
-
Micromachined silicon CO gas sensors
-
Montréal, Québec, Canada, 4-9 May
-
R.P. Lely, H. G. Hughes, D. Walters, Micromachined silicon CO gas sensors, Electrochemical Society Proc. on Microstructure and Microfabricated Systems III, Montréal, Québec, Canada, 4-9 May, 1997, pp 188-198.
-
(1997)
Electrochemical Society Proc. on Microstructure and Microfabricated Systems III
, vol.3
, pp. 188-198
-
-
Lely, R.P.1
Hughes, H.G.2
Walters, D.3
-
10
-
-
0020139946
-
Hall measurement studies and electrical conduction model of tin oxide ultrafine particle films
-
H. Ogawa, M. Nishikawa, A. Abe, Hall measurement studies and electrical conduction model of tin oxide ultrafine particle films, J. Appl. Phys. 53 (6) (1982) 4448-4455.
-
(1982)
J. Appl. Phys.
, vol.53
, Issue.6
, pp. 4448-4455
-
-
Ogawa, H.1
Nishikawa, M.2
Abe, A.3
-
11
-
-
0024683354
-
2-based devices
-
2-based devices, Sensors and Actuators 18 (1) (1989) 71-113.
-
(1989)
Sensors and Actuators
, vol.18
, Issue.1
, pp. 71-113
-
-
Kohl, D.1
-
12
-
-
0010909857
-
Tin oxide gas sensors. Part 2 - The role of surface additives
-
J.F. McAleer, P.T. Moseley, J.O.W. Norris, D.E. Williams, B.C. Tofield, Tin oxide gas sensors. Part 2 - the role of surface additives, J. Chem. Soc. Faraday Trans. I 84 (2) (1988) 441-457.
-
(1988)
J. Chem. Soc. Faraday Trans. I
, vol.84
, Issue.2
, pp. 441-457
-
-
McAleer, J.F.1
Moseley, P.T.2
Norris, J.O.W.3
Williams, D.E.4
Tofield, B.C.5
-
13
-
-
0029370113
-
A model for the gas sensing properties of tin oxide thin films with surface catalysis
-
C.A. Papadopoulos, J.N. Avaritsiotis, A model for the gas sensing properties of tin oxide thin films with surface catalysis, Sensors and Actuators B 28 (1995) 201-210.
-
(1995)
Sensors and Actuators B
, vol.28
, pp. 201-210
-
-
Papadopoulos, C.A.1
Avaritsiotis, J.N.2
-
14
-
-
0348171525
-
2 semiconductor oxide used as gas sensors
-
Warsaw, Poland, 21-24 September
-
2 semiconductor oxide used as gas sensors, Tech. Digest, 11th Eur. Conf. on Solid-State Transducers (Eurosensors XI), Warsaw, Poland, 21-24 September, 1997.
-
(1997)
Tech. Digest, 11th Eur. Conf. on Solid-State Transducers (Eurosensors XI)
, vol.11
-
-
Hazemann, J.L.1
Gaïdi, M.2
Labeau, M.3
Chenevier, B.4
-
15
-
-
0019609549
-
Homogeneous semiconductor gas sensor
-
G. Heiland, Homogeneous semiconductor gas sensor, Sensors and Actuators 2 (1982) 343-361.
-
(1982)
Sensors and Actuators
, vol.2
, pp. 343-361
-
-
Heiland, G.1
-
16
-
-
0342601677
-
Temperature programmed desorption study of water absorbed on metal oxides - Part 2: Tin oxide surfaces
-
M. Egashira, M. Nakashima, S. Kawasumi, Temperature programmed desorption study of water absorbed on metal oxides - Part 2: tin oxide surfaces, J. Phys. Chem. 85 (1981) 4125-4130.
-
(1981)
J. Phys. Chem.
, vol.85
, pp. 4125-4130
-
-
Egashira, M.1
Nakashima, M.2
Kawasumi, S.3
|