Effect of annealing and argon-to-oxygen ratio on sputtered SnO2 thin film sensor for ethylene gas detection

Materials Chemistry and Physics

Volumn 124, Issue 1, 2010, Pages 563-568

  Ahn, Hosang ^a   Noh, Joo Hyon ^a   Kim, Seon Bae ^a   Overfelt, Ruel A ^a   Yoon, Young Soo ^b   Kim, Dong Joo ^a  

^a AUBURN UNIVERSITY   (United States)

^b Yonsei University   (South Korea)

Author keywords

Ethylene; R.F. sputtering; Thin film; Tin oxide

Indexed keywords

ALUMINA SUBSTRATES; AS-DEPOSITED FILMS; CRYSTALLINE PHASE; DEPOSITION PARAMETERS; ETHYLENE GAS; GAS SENSING PROPERTIES; POST ANNEALING; R.F. MAGNETRON SPUTTERING; R.F. SPUTTERING; SPUTTER GAS; THIN FILM SENSORS;

ARGON; CHEMICAL DETECTION; ETHYLENE; GAS DETECTORS; GAS SENSING ELECTRODES; GASES; OXYGEN; SENSORS; THIN FILMS; TIN; TIN OXIDES; TITANIUM COMPOUNDS; VAPOR DEPOSITION;

ANNEALING;

EID: 77957232862     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matchemphys.2010.07.012     Document Type: Article

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