Effect of heat diffusion during state transitions in resistive switching memory device based on nickel-rich nickel oxide film

IEEE Transactions on Electron Devices

Volumn 59, Issue 5, 2012, Pages 1558-1562

  Hu, S G ^a   Liu, Yang ^a   Chen, T P ^b   Liu, Zhen ^b   Yang, Ming ^b   Yu, Qi ^a   Fung, S ^c  

^a UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^c UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

Heat diffusion; mechanism competition; nickel oxide; resistive random access memory (RRAM)

Indexed keywords

DOMINANT PROCESS; HEAT DIFFUSIONS; HIGH-RESISTANCE STATE; LOW-RESISTANCE STATE; NICKEL OXIDE THIN FILMS; OFF TIME; PULSE VOLTAGE; RESISTIVE RANDOM ACCESS MEMORY; RESISTIVE SWITCHING; RESISTIVE SWITCHING MEMORIES; STATE TRANSITIONS; SWITCHING BEHAVIORS;

DEFORMATION; NICKEL OXIDE; NONVOLATILE STORAGE; OXIDE FILMS;

SWITCHING;

EID: 84862798418     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2012.2186300     Document Type: Article

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