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Electrochemical and Solid-State Letters

Volumn 14, Issue 10, 2011, Pages

Competition of resistive-switching mechanisms in nickel-rich nickel oxide thin films

(6) Yu, Q a Liu, Y a Chen, T P b Liu, Z b Yu, Y F a Fung, S c

a UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA (China)

b NANYANG TECHNOLOGICAL UNIVERSITY (Singapore)

c UNIVERSITY OF HONG KONG (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTIVE FILAMENTS; HIGH-RESISTANCE STATE; LOW-RESISTANCE STATE; NICKEL OXIDE THIN FILMS; PULSE VOLTAGE; RESET VOLTAGE; RESISTANCE FLUCTUATION;

NICKEL; NICKEL OXIDE; OXIDE FILMS; THIN FILMS;

SWITCHING;

EID: 80051627646 PISSN: 10990062 EISSN: None Source Type: Journal
DOI: 10.1149/1.3609261 Document Type: Article

Times cited : (6)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.