Hole mobility in germanium as a function of substrate and channel orientation, strain, doping, and temperature

IEEE Transactions on Electron Devices

Volumn 59, Issue 7, 2012, Pages 1878-1884

  Riddet, Craig ^a   Watling, Jeremy R ^a   Chan, Kah Hou ^a   Parker, Evan H C ^b   Whall, Terence E ^b   Leadley, David R ^b   Asenov, Asen ^a,c  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

^b UNIVERSITY OF WARWICK   (United Kingdom)

^c Gold Standard Simulations Ltd   (United Kingdom)

Author keywords

Germanium (Ge); hole transport; k cdot p; Monte Carlo (MC); MOSFET; strain

Indexed keywords

BIAXIAL STRAINS; CHANNEL ORIENTATIONS; COMPREHENSIVE STUDIES; DENSITY OF STATE; DOPED MATERIALS; FULL BAND MONTE CARLO SIMULATION; HOLE TRANSPORTS; IMPURITY SCATTERING; LATTICE TEMPERATURES; MOBILITY ENHANCEMENT; MONTE CARLO; MOS-FET; SUPERIOR MOBILITY; TRANSISTOR PERFORMANCE; VIRTUAL SUBSTRATES;

GERMANIUM; STRAIN; SUBSTRATES;

HOLE MOBILITY;

EID: 84862653474     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2012.2194498     Document Type: Article

References (36)

1. International Technology Roadmap for Semiconductors (ITRS). [Online]. Available: http://public.itrs.net
2. S. Takagi, T. Iisawa, T. Tezuka, T. Numata, S. Nakaharai, N. Hirashita, Y. Moriyama, K. Usuda, E. Toyoda, S. Dissanayake, M. Shichijo, R. Nakane, S. Sugahara, M. Takenaka, and N. Sugiyama, "Carriertransport-enhanced channel CMOS for improved power consumption and performance," IEEE Trans. Electron Devices, vol. 55, no. 1, pp. 21-39, Jan. 2008.
3. D. A. Antoniadis and A. Khakifirooz, "MOSFET performance scaling: Limitations and future options," in IEDM Tech. Dig., 2008, pp. 1-4.
4. T. Krishnamohan, D. Kim, T. V. Dinh, A.-T. Pham, B. Meinerzhagen, C. Jungemann, and K. Saraswat, "Comparison of (001), (110) and (111) Uniaxial-and Biaxial-Strained-Ge and strained-Si PMOS DGFETs for all channel orientation: Mobility enhancement, drive current, delay and off-state leakage," in IEDM Tech. Dig., 2008, pp. 1-4.
5. M. Caymax, G. Eneman, F. Bellenger, C. Merckling, A. Delabie, G.Wang, R. Loo, E. Simoen, J. Mitard, B. De Jaeger, G. Hellings, K. De Meyer, M. Meuris, and M. Heyns, "Germanium for advanced CMOS anno 2009: A SWOT analysis," in IEDM Tech Dig., 2009, pp. 1-4.
6. D. Kuzum, A. J. Pethe, T. Krishnamohan, and K. C. Saraswat, "Ge (100) and (111) N-and P-FETs with high mobility and low-T mobility characterization," IEEE Trans. Electron Devices, vol. 56, no. 4, pp. 648-655, Apr. 2009.
7. Landolt-Bfrnstein Group III Condensed Matter: Semiconductors A1: Group IV Elements, II-VI and III-V Compounds, Part ß: Electronic, Transport, Optical and Other Properties, Complete Edition of Vols. III/17a, 22a and 41A1ß on CD-ROM2002.
8. A. I. Kingon, J.-P. Maria, and S. K. Streiffer, "Alternative dielectrics to silicon dioxide for memory and logic devices," Nature, vol. 406, no. 6799, pp. 1032-1038, Aug. 2000.
9. G. Hellings, J. Mitard, G. Eneman, B. De Jaeger, D. P. Brunco, D. Shamiryan, T. Vandeweyer, M. Meuris, M. M. Heyns, and K. De Meyer, "High performance 70-nm germanium pMOSFETs with boron LDD implants," IEEE Electron Device Lett., vol. 30, no. 1, pp. 88-90, Jan. 2009.
10. D. Lin, G. Brammertz, S. Sioncke, C. Fleischmann, A. Delabie, K. Martens, H. Bender, T. Conard, W. H. Tseng, J. C. Lin, W. E. Wang, K. Temst, A. Vatomme, J. Mitard, M. Caymax, M. Meuris, M. Heyns, and T. Hoffmann, "Enabling the high-performance InGaAs/Ge CMOS: A common gate stack solution," in IEDM Tech. Dig., 2009, pp. 1-4.
11. S. Takagi and M. Takenaka, "III-V/Ge CMOS technologies on Si platform," in VLSI Symp. Tech. Dig., 2010, pp. 147-148.
12. C. Jacoboni and P. Lugli, The Monte Carlo Method for Semiconductor Device Simulation. New York: Springer-Verlag Wien, 1989.
13. M. V. Fischetti and S. E. Laux, "Monte Carlo analysis of electron transport in small semiconductor devices including band-structure and spacecharge effects," Phys. Rev. B, vol. 38, no. 14, pp. 9721-9745, Nov. 1988.
14. C. Jacoboni and L. Reggiani, "Bulk hot-electron properties of cubic semiconductors," Adv. Phys., vol. 28, no. 4, pp. 493-553, Jul. 1979.
15. P. H. Nguyen, K. R. Hofmann, and G. Paasch, "Comparative full-band Monte Carlo study of Si and Ge with screened pseudopotential-based phonon scattering rates," J. Appl. Phys., vol. 94, no. 1, pp. 375-386, Jul. 2003.
16. J. E. Dijkstra and W. T. Wenckebach, "Hole transport in strained Si," J. Appl. Phys., vol. 81, no. 3, pp. 1259-1263, Feb. 1997.
17. G. Bir and G. Pikus, Symmetry and Strain-Induced Effects in Semiconductors. New York: Wiley, 1974.
18. D. J. Paul, "Si/SiGe heterostructures: From material and physics to devices and circuits," Sem. Sci. Techn., vol. 19, no. 10, pp. R75-R108, Oct. 2004.
19. B. Fischer and K. R. Hofmann, "A full-band Monte Carlo model for the temperature dependence of electron and hole transport in silicon," Appl. Phys. Lett., vol. 76, no. 5, pp. 583-585, Jan. 2000.
20. F. M. Bufler, A. Schenk, and W. Fichtner, "Simplified model for inelastic acoustic phonon scattering of holes in Si and Ge," J. Appl. Phys., vol. 90, no. 5, pp. 2626-2628, Sep. 2001.
21. J. D. Wiley, "Polar mobility of holes in III-V compounds," Phys. Rev. B, vol. 4, no. 8, pp. 2485-2493, Oct. 1971.
22. J. M. Ziman, Principles of the Theory of Solids, 2nd ed. Cambridge, U.K.: Cambridge Univ. Press, 1979.
23. L. Reggiani, C. Canali, F. Nava, and G. Ottaviani, "Hole drift velocity in germanium," Phys. Rev. B., vol. 16, no. 6, pp. 2781-2791, Sep. 1977.
24. J. P. Nougier and M. Rolland, "Mobility, noise temperature, and diffusivity of hot holes in germanium," Phys. Rev. B, vol. 8, no. 12, pp. 5728-5737, Dec. 1973.
25. J. R. Watling, C. Riddet, M. K. H. Chan, and A. Asenov, "Simulation of hole-mobility in doped relaxed and strained Ge layers," J. Appl. Phys., vol. 108, no. 9, pp. 093715-1-093715-10, Nov. 2010.
26. E. Ungersboeck and H. Kosina, "The effect of degeneracy on electron transport in strained silicon inversion layers," in Proc. SISPAD, 2005, pp. 311-314.
27. J. W. Matthews and A. E. Blakeslee, "Defects in epitaxial multilayers III. Preparation of almost perfect multilayers," J. Crystal Growth, vol. 32, no. 2, pp. 265-273, Feb. 1976.
28. J. Mitard, B. De Jaeger, G. Eneman, A. Dobbie, M. Myronov, M. Kobayashi, J. Geypen, H. Bender, B. Vincent, R. Krom, J. Franco, G.Winderickx, E. Vrancken,W. Vanherle,W.-E.Wang, J. Tseng, R. Loo, K. De Meyer, M. Caymax, L. Pantisano, D. R. Leadley, M. Meuris, P. P. Absil, S. Biesemans, and T. Hoffmann, "High hole mobility in 65 nm strained Ge p-channel field effect transistors with HfO2 gate dielectric," Jpn. J. Appl. Phys., vol. 50, no. 4, pp. 04DC17-1-04DC17-5, Apr. 2011.
29. R. Pillarisetty, B. Chu-Kung, S. Corcoran, G. Dewey, J. Kavalieros, H. Kennel, R. Kotlyar, V. Le, D. Lionberger, M. Metz, N. Mukherjee, J. Nah, W. Rachmady, M. Radosavljevic, U. Shah, S. Taft, H. Then, N. Zelick, and R. Chau, "High mobility strained germanium quantum well field effect transistor as the p-channel device option for low power (Vcc = 0.5 V) III-V CMOS architecture," in IEDM Tech. Dig., 2010, pp. 6.7.1-6.7.4.
30. K. Ahmed and K. Schuegraf, "Transistor wars," IEEE Spectr., vol. 48, no. 11, pp. 50-66, Nov. 2011.
31. G. F. Formicone, M. Saraniti, D. Z. Vasileska, and D. K. Ferry, "Study of a 50-nm nMOSFET by ensemble Monte Carlo simulation including a new approach to surface roughness and impurity scattering in the Si inversion layer," IEEE Trans. Electron Devices, vol. 49, no. 1, pp. 125-132, Jan. 2002.
32. F. M. Bufler, Full-Band Monte Carlo Simulation of Electrons and Holes in Strained Si and SiGe. München, Germany: Herbert Utz Verlag Wissenschaft, 1998.
33. G. Dresselhaus, A. F. Kip, and C. Kittel, "Cyclotron resonance of electrons and holes in silicon and germanium crystals," Phys. Rev., vol. 98, no. 2, pp. 368-384, Apr. 1955.
34. J. D. Wiley, "Valence-band deformation potentials for the III-V compounds," Solid State Commun., vol. 8, no. 22, pp. 1865-1868, Nov. 1970.
35. D. Rideau, M. Feraille, L. Ciampolini, M. Minondo, C. Tavernier, and H. Jaouen, "Strained Si, Ge and Si1-xGex alloys modeled with a firstprinciples-optimized full-zone k . p method," Phys. Rev. B, vol. 74, no. 19, pp. 195 208-1-195 208-20, Nov. 2006.
36. J. M. Hinckley and J. Singh, "Hole transport theory in pseudomorphic Si1-xGex alloys grown on Si(001) substrates," Phys. Rev. B, vol. 41, no. 5, pp. 2912-2926, Feb. 1990.