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Journal of Applied Physics

Volumn 108, Issue 9, 2010, Pages

Simulation of hole-mobility in doped relaxed and strained Ge layers

(4) Watling, Jeremy R a Riddet, Craig a Chan, Morgan Kah H a Asenov, Asen a

a UNIVERSITY OF GLASGOW (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL MATERIALS; COMPLEMENTARY METAL OXIDE SEMICONDUCTORS; COULOMBIC INTERACTIONS; DYNAMIC RANGE; FULL-BAND MONTE CARLO; IONIZED IMPURITY SCATTERING; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; P-MOSFETS; PLASMON SCATTERING; SCATTERING RATES; SILICON-BASED; STRAINED-GE; TRANSPORT DIRECTION; VELOCITY-FIELD CHARACTERISTICS;

FIELD EFFECT TRANSISTORS; GERMANIUM; MOSFET DEVICES; PHOSPHORUS; SCATTERING; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; TRANSPORT PROPERTIES;

HOLE MOBILITY;

EID: 78649278591 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3506517 Document Type: Article

Times cited : (6)

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