Germanium for advanced CMOS anno 2009: A SWOT analysis

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2009, Pages

  Caymax, M ^a   Eneman, G ^b,c   Bellenger, F ^b   Merckling, C ^a   Delabie, A ^a   Wang, G ^b   Loo, R ^a   Simoen, E ^a   Mitard, J ^a   De Jaeger, B ^a   Hellings, G ^b,c   De Meyer, K ^b   Meuris, M ^a   Heyns, M ^b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c FWO ^*  (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ADVANCED CMOS; ALTERNATIVE MATERIALS; BAND GAPS; MOSFETS; N-TYPE DOPING; SCALED CMOS; SWOT ANALYSIS;

CMOS INTEGRATED CIRCUITS; ELECTRON DEVICES; GERMANIUM; LATTICE MISMATCH;

CARRIER MOBILITY;

EID: 77952341849     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2009.5424320     Document Type: Conference Paper

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