A full-band Monte Carlo model for the temperature dependence of electron and hole transport in silicon

Applied Physics Letters

Volumn 76, Issue 5, 2000, Pages 583-585

  Fischer, Björn ^a,b   Hofmann, Karl R ^a  

^a LEIBNIZ UNIVERSITY HANNOVER   (Germany)

^b UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000923887     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.125824     Document Type: Article

References (22)

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