Comparative full-band Monte Carlo study of Si and Ge with screened pseudopotential-based phonon scattering rates

Journal of Applied Physics

Volumn 94, Issue 1, 2003, Pages 375-386

  Nguyen, Phuong Hoa ^a,c   Hofmann, Karl R ^a   Paasch, Gernot ^b  

^a LEIBNIZ UNIVERSITY HANNOVER   (Germany)

^b IFW DRESDEN   (Germany)

^c FRAUNHOFER INSTITUTE FOR INTEGRATED SYSTEMS AND DEVICE TECHNOLOGY IISB   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DOPING (ADDITIVES); GERMANIUM; MONTE CARLO METHODS; PHONONS; SCATTERING;

PHONON SCATTERING RATES;

SILICON;

EID: 0042341731     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1579860     Document Type: Article

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