Photosensitivity of amorphous IGZO TFTs for active-matrix flat-panel displays

Digest of Technical Papers - SID International Symposium

Volumn 39, Issue 3, 2008, Pages 1215-1218

  Fung, Tze Ching ^a   Mullins, Barry G ^a   Nomura, Kenji ^b   Kamiya, Toshio ^b   Shieh, Han Ping David ^c   Chuang, Chiao Shun ^a,c   Hosono, Hideo ^b   Kanicki, Jerzy ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^c NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

DRAIN CURRENT; ENERGY GAP; FLAT PANEL DISPLAYS; GALLIUM COMPOUNDS; II-VI SEMICONDUCTORS; LIGHT SENSITIVE MATERIALS; PHOTOSENSITIVITY; SEMICONDUCTING INDIUM COMPOUNDS; THRESHOLD VOLTAGE; ZINC OXIDE;

AMORPHOUS-INDIUM GALLIUM ZINC OXIDES; DENSITY OF STATE; FIELD-EFFECT MOBILITIES; OPTICAL AND ELECTRICAL PROPERTIES; OPTICAL ENERGY BAND GAP; PHOTOGENERATED ELECTRONS; PHOTON ENERGY RANGE; SUBTHRESHOLD SWING;

THIN FILM TRANSISTORS;

EID: 54549084345     PISSN: 0097966X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1889/1.3069354     Document Type: Conference Paper

References (11)

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