The effect of argon dilution on deposition of microcrystalline silicon by microwave plasma enhanced chemical vapor deposition

Thin Solid Films

Volumn 515, Issue 19 SPEC. ISS., 2007, Pages 7490-7494

  Soppe, W J ^a   Devilee, C ^a   Geusebroek, M ^a   Loffler J ^a   Muffler, H J ^a  

^a TNO   (Netherlands)

Author keywords

Optical properties; Plasma processing deposition; Raman scattering; Silicon

Indexed keywords

ARGON; DEFECT DENSITY; MICROCRYSTALLINE SILICON; OPTICAL PROPERTIES; RAMAN SCATTERING; SOLAR CELLS;

ELECTRON TEMPERATURES; PLASMA PROCESSING DEPOSITION; REACTANT GASES;

PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

EID: 34547603086     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2006.11.156     Document Type: Article

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