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Volumn 207, Issue 3, 2010, Pages 525-529
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High hydrogen dilution and low substrate temperature cause columnar growth of hydrogenated amorphous silicon
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Author keywords
[No Author keywords available]
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Indexed keywords
COLUMNAR GROWTH;
DILUTION RATIO;
GROWTH BEHAVIOUR;
GROWTH PRECURSORS;
HYDROGEN DILUTION;
HYDROGENATED AMORPHOUS SILICON;
INCUBATION LAYER;
LAYER THICKNESS;
LOW SUBSTRATE TEMPERATURE;
MIXED PHASE;
SUBSTRATE TEMPERATURE;
TEM;
TRANSMISSION ELECTRON MICROSCOPE;
ELECTRON MICROSCOPES;
SUBSTRATES;
TRANSMISSION ELECTRON MICROSCOPY;
AMORPHOUS SILICON;
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EID: 77950965183
PISSN: 18626300
EISSN: 18626319
Source Type: Journal
DOI: 10.1002/pssa.200982847 Document Type: Article |
Times cited : (6)
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References (13)
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