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Volumn 207, Issue 3, 2010, Pages 525-529

High hydrogen dilution and low substrate temperature cause columnar growth of hydrogenated amorphous silicon

Author keywords

[No Author keywords available]

Indexed keywords

COLUMNAR GROWTH; DILUTION RATIO; GROWTH BEHAVIOUR; GROWTH PRECURSORS; HYDROGEN DILUTION; HYDROGENATED AMORPHOUS SILICON; INCUBATION LAYER; LAYER THICKNESS; LOW SUBSTRATE TEMPERATURE; MIXED PHASE; SUBSTRATE TEMPERATURE; TEM; TRANSMISSION ELECTRON MICROSCOPE;

EID: 77950965183     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200982847     Document Type: Article
Times cited : (6)

References (13)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.