Surface Chemistry of Si:H:Cl Film Formation by RF Plasma-Enhanced Chemical Vapor Deposition of SiH2Cl2 and SiCl4

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 42, Issue 10 A, 2003, Pages

  Ito, Tetsuji ^a   Hashimoto, Koji ^a   Shirai, Hajime ^a  

^a SAITAMA UNIVERSITY   (Japan)

Author keywords

FTIR RAS; Nc Si; Phase transition; Rf PE CVD; SiCl4; SiH2Cl2

Indexed keywords

AMORPHOUS SILICON; CRYSTALLIZATION; FILM GROWTH; FOURIER TRANSFORM INFRARED SPECTROSCOPY; LOW TEMPERATURE EFFECTS; NANOSTRUCTURED MATERIALS; PHASE TRANSITIONS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SURFACE CHEMISTRY; THIN FILMS;

BOND BREAKING PROCESSES; EXOTHERMIC REACTIONS;

SILICON COMPOUNDS;

EID: 0345134631     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.l1119     Document Type: Article

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