|
|
Volumn 74, Issue 1-4, 2002, Pages 421-427
|
|
Chemistry of the chlorine-terminated surface for low-temperature growth of crystal silicon films by RF plasma-enhanced chemical vapor deposition
a
a
a
a
|
|
Author keywords
c Si:H; B2H 6 doping; FTIR RAS; SiCl4; SiH2Cl2
|
|
Indexed keywords
CHLORINATION;
CRYSTAL GROWTH;
CRYSTAL IMPURITIES;
CRYSTALLIZATION;
FOURIER TRANSFORM INFRARED SPECTROSCOPY;
LOW TEMPERATURE EFFECTS;
PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;
SEMICONDUCTING SILICON;
SEMICONDUCTING SILICON COMPOUNDS;
SEMICONDUCTOR DOPING;
SURFACE CHEMISTRY;
FOURIER TRANSFORM INFRARED REFLECTION ABSORPTION SPECTROSCOPY;
SEMICONDUCTING FILMS;
|
|
EID: 0036778601
PISSN: 09270248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0927-0248(02)00118-6 Document Type: Article |
|
Times cited : (15)
|
|
References (16)
|
