Characteristics of gallium-doped zinc oxide thin-film transistors fabricated at room temperature using radio frequency magnetron sputtering method

Japanese Journal of Applied Physics

Volumn 47, Issue 1, 2008, Pages 87-90

  Jeon, Hoonha ^a   Verma, Ved Prakash ^b   Hwang, Sookhyun ^a   Lee, Sooyeon ^a   Park, Chiyoung ^a   Kim, Do Hyun ^a   Choi, Wonbong ^b   Jeon, Minhyon ^a  

^a Inje University   (South Korea)

^b Florida International University   (United States)

Author keywords

Depletion mode; Ga doped zinc oxide (GZO); Radio frequency magnetron sputtering method; SiO2 gate oxide; Thin film transistors (TFTs)

Indexed keywords

GALLIUM; GATE DIELECTRICS; LEAKAGE CURRENTS; MAGNETRON SPUTTERING; SEMICONDUCTOR DOPING; ZINC OXIDE;

DEPLETION MODE; GATE INSULATOR; GATE OXIDE MATERIALS; ROOT MEAN SQUARE (RMS);

THIN FILM TRANSISTORS;

EID: 38549141098     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.87     Document Type: Article

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