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Volumn 27, Issue 8, 2012, Pages

Frequency-dependent dielectric response of HfTaO x-based metalinsulatormetal capacitors

Author keywords

[No Author keywords available]

Indexed keywords

AC CONDUCTIVITY; BOTTOM ELECTRODES; CONDUCTION MECHANISM; DIELECTRIC LAYER; DIELECTRIC RESPONSE; DIFFERENT THICKNESS; FREQUENCY DEPENDENCE; FREQUENCY-DEPENDENT; HIGH-CAPACITANCE DENSITY; LOSS TANGENT;

EID: 84862183557     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/27/8/085002     Document Type: Article
Times cited : (10)

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  • 15
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  • 19
    • 34047246671 scopus 로고    scopus 로고
    • Modeling of nonlinearities in the capacitance-voltage characteristics of high- k metal-insulator-metal capacitors
    • DOI 10.1063/1.2719618
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  • 24
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    • Mechanism of leakage current reduction of tantalum oxide capacitors by postmetallization annealing
    • DOI 10.1063/1.2408645
    • Lau W S, Khaw K K, Han T and Sandler N P 2006 Appl. Phys. Lett. 89 262901 (Pubitemid 46058046)
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.