Structural and electrical characteristics of rapid thermally processed ferroelectric Bi4Ti3O12 thin films prepared by metalorganic solution deposition technique

Journal of Applied Physics

Volumn 80, Issue 4, 1996, Pages 2349-2357

  Joshi, P C ^a   Desu, S B ^a  

^a VIRGINIA POLYTECHNIC INSTITUTE AND STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITORS; CRYSTAL STRUCTURE; DEPOSITION; DIELECTRIC FILMS; ELECTRIC PROPERTIES; ELECTRIC VARIABLES MEASUREMENT; MAGNETIC FIELDS; POLYCRYSTALLINE MATERIALS; SCANNING ELECTRON MICROSCOPY; THIN FILMS; X RAY DIFFRACTION;

BISMUTH TITANATE; DISSIPATION FACTOR; FULL WIDTH AT HALF MAXIMUM; LATTICE MORPHOLOGY; METALLORGANIC SOLUTION DEPOSITION; RAPID THERMAL ANNEALING;

BISMUTH COMPOUNDS;

EID: 0030212039     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.363069     Document Type: Article

References (27)

1. C. A. Paz de Araujo, L. D. McMillan, B. M. Melnick, J. D. Cuchiaro, and J. F. Scott, Ferroelectrics 104, 241 (1990).
2. G. H. Haerting, J. Vac. Sci. Technol. 9, 414 (1990).
3. M. H. Francombe and S. V. Krishnaswamy, J. Vac. Sci. Technol. A 8, 1382 (1990).
4. B. Aurivillius, Ariv Kemi 1, 463 (1949).
5. S. Y. Wu, W. J. Takei, and M. H. Francombe, Ferroelectrics 10, 209 (1976).
6. S. E. Cummins and L. E. Cross, J. Appl. Phys. 39, 2268 (1968).
7. H. Buhay, S. Sinharoy, W. H. Kasner, M. H. Francombe, D. R. Lampe, and E. Stepke, Appl. Phys. Lett. 58, 1470 (1991).
8. S. B. Desu, Phys. Status Solidi (a) 151, 467 (1995).
9. J. J. Lee, C. L. Thio, and S. B. Desu, Phys. Status Solidi (a) 151, 171 (1995).
10. T. S. Kalkur, J. Kulkarni, Y. C. Lu, M. Rowe, W. Han, and L. Kammerdiner. Ferroelectrical 116, 135 (1991).
11. M. Yamaguchi, T. Nagatomo, and O. Omoto, Jpn. J. Appl. Phys. 34, 5116 (1995).
12. N. Mafferi and S. B. Krupanidhi, Appl. Phys. Lett. 60, 788 1992).
13. W. Wu, K. Fumoto, Y. Oishi, M. Okuyama, and Y. Hamakawa, Jpn. J. Appl. Phys. 34, 5141 (1995).
14. K. Masumoto, T. Goto, Y. Masuda, A. Baba, and T. Hirai, Appl. Phys. Lett. 58, 243 (1991).
15. P. C. Joshi, A. Mansingh, M. N. Kamalasanan, and S. Chandra, Appl. Phys. Lett. 59 2389 (1991).
16. R. Singh, J. Appl. Phys. 63, R59 (1988).
17. P. C. Joshi and S. B. Krupanidhi, J. Appl. Phys. 72, 5827 (1992).
18. P. Scherrer, Gottinger Nachr. 2, 98 (1918).
19. J. Park and W. Grannemann, Ferroelectrics 10, 217 (1976).
20. M. Sayer, A. Mansingh, A. K. Arora, and A. Lo, Intergrated Ferroelectrics 1, 129 (1992).
21. K. Okazaki, and K. Nagata, J. Am. Ceram. Soc. 56, 82 (1973).
22. C. Feldman, J. Appl. Phys. 65, 872 (1982).
23. W. J. Takei, N. P. Forrnigoni, and M. H. Francombe, J. Vac. Sci. Technol. 7, 442 (1970).
24. M. Stuart, Phys. Status Solidi 23, 596 (1967).
25. J. G. Simmons, in Handbook of Thin Film Technology, edited by L. I. Maissel and R. Glang (McGraw-Hill, New York, 1970), pp. 14-35.
26. M. A. Lampert and P. Mark, Current Injection in Solids (Academic, New York, 1970).
27. K. L. Chopra, Thin Film Phenomena (McGraw-Hill, New York, 1969).