On the investigation of electronic defect states in ZnO thin films by space charge spectroscopy with optical excitation

Solid-State Electronics

Volumn 75, Issue , 2012, Pages 48-54

  Schmidt, Matthias ^a   Wenckstern, Holger Von ^a   Pickenhain, Rainer ^a   Grundmann, Marius ^a  

^a UNIVERSITY OF LEIPZIG   (Germany)

Author keywords

Acceptor; Defect; DLTS; Hole trap; Minority carrier transient spectroscopy; Photo capacitance; Photo current; Space charge spectroscopy; Zinc oxide

Indexed keywords

ACCEPTOR; CAPACITANCE VOLTAGE; ELECTRONIC DEFECTS; MINORITY CARRIER TRANSIENT SPECTROSCOPIES; P-TYPE CONDUCTION; PHOTO-CAPACITANCE; WIDE BAND GAP; ZINC OXIDE THIN FILMS; ZNO THIN FILM;

CAPACITANCE; DEFECTS; ELECTRIC SPACE CHARGE; HOLE TRAPS; PHOTOEXCITATION; POWER QUALITY; ZINC OXIDE;

DEEP LEVEL TRANSIENT SPECTROSCOPY;

EID: 84862170689     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2012.04.043     Document Type: Article

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