Electronic properties of shallow level defects in ZnO grown by pulsed laser deposition

Journal of Physics: Conference Series

Volumn 100, Issue PART 4, 2008, Pages

  Auret, F D ^a   Meyer, W E ^a   Van Rensburg, P J Janse ^a   Hayes, M ^a   Nel, J M ^a   Von Wenckstern, H ^b   Hochmuth, H ^b   Biehne, G ^b   Lorenz, M ^b   Grundmann, M ^b  

^a UNIVERSITY OF PRETORIA   (South Africa)

^b UNIVERSITY OF LEIPZIG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ARRHENIUS PLOTS; DEFECTS; DEPOSITION; ELECTRIC FIELDS; ELECTRONIC PROPERTIES; PULSED LASER DEPOSITION; PULSED LASERS; ZINC OXIDE; DEEP LEVEL TRANSIENT SPECTROSCOPY; II-VI SEMICONDUCTORS; NANOSCIENCE; OXIDE MINERALS; VACUUM APPLICATIONS;

DLTS MEASUREMENTS; REVERSE BIAS; SHALLOW LEVELS; STRONG ELECTRIC FIELDS; ZERO BIAS;

DEEP LEVEL TRANSIENT SPECTROSCOPY; PULSED LASERS;

EID: 77954340916     PISSN: 17426588     EISSN: 17426596     Source Type: Conference Proceeding    
DOI: 10.1088/1742-6596/100/4/042038     Document Type: Conference Paper

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