Electronic properties of defects in pulsed-laser deposition grown ZnO with levels at 300 and 370 meV below the conduction band

Physica B: Condensed Matter

Volumn 401-402, Issue , 2007, Pages 378-381

  Auret, F Danie ^a   Meyer, W E ^a   Janse van Rensburg, P J ^a   Hayes, M ^a   Nel, J M ^a   von Wenckstern, Holger ^b   Schmidt, H ^b   Biehne, G ^b   Hochmuth, H ^b   Lorenz, M ^b   Grundmann, M ^b  

^a UNIVERSITY OF PRETORIA   (South Africa)

^b UNIVERSITY OF LEIPZIG   (Germany)

Author keywords

Defects; High resolution Laplace DLTS; Pulsed laser deposition; ZnO

Indexed keywords

ACTIVATION ENERGY; CONDUCTION BANDS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC PROPERTIES; PULSED LASER DEPOSITION;

ELECTRON CAPTURE; HIGH RESOLUTION LAPLACE;

ZINC OXIDE;

EID: 36048949973     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2007.08.192     Document Type: Article

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