Degradation of AlGaN/GaN high electron mobility transistors related to hot electrons

Applied Physics Letters

Volumn 100, Issue 23, 2012, Pages

  Meneghini, Matteo ^a   Stocco, Antonio ^a   Silvestri, Riccardo ^a   Meneghesso, Gaudenzio ^a   Zanoni, Enrico ^a  

^a UNIVERSITY OF PADOVA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ACCELERATION FACTORS; ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS; DEGRADATION RATE; EXPERIMENTAL EVIDENCE; GATE DRAIN; INDUCED DEGRADATION; NEGATIVE CHARGE; OFF-STATE STRESS;

DEGRADATION; ELECTROLUMINESCENCE; GALLIUM NITRIDE; HOT ELECTRONS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 84862152457     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4723848     Document Type: Article

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