Measurement of channel temperature in GaN high-electron mobility transistors

IEEE Transactions on Electron Devices

Volumn 56, Issue 12, 2009, Pages 2895-2901

  Joh, Jungwoo ^a   Del Alamo, Jesús A ^a   Chowdhury, Uttiya ^b   Chou, Tso Min ^b   Tserng, Hua Quen ^b   Jimenez, Jose L ^b  

^a Department of Electrical Engineering and Computer Science   (United States)

^b TRIQUINT SEMICONDUCTOR   (United States)

Author keywords

Channel temperature; GaN; High electron mobility transistors (HEMTs); Junction temperature; Measurement

Indexed keywords

CHANNEL TEMPERATURE; DEVICE GEOMETRIES; DEVICE STRUCTURES; ELECTRICAL MEASUREMENT; FIGURES OF MERITS; GAN; JUNCTION TEMPERATURES; PACKAGED DEVICE;

GALLIUM NITRIDE; MEASUREMENTS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 84859733839     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2009.2032614     Document Type: Article

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