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Volumn 109, Issue 2, 2011, Pages

Surface modification of a ferroelectric polymer insulator for low-voltage readable nonvolatile memory in an organic field-effect transistor

(6) Kim, Won Ho a Bae, Jin Hyuk a Kim, Min Hoi a Keum, Chang Min a Park, Jaehoon a Lee, Sin Doo a

a Seoul National University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

FERROELECTRIC FIELD EFFECT TRANSISTORS; FERROELECTRIC POLYMERS; GRAIN SIZE; INTERFACIAL INTERACTION; LOW-VOLTAGE; MOBILITY ENHANCEMENT; NEGATIVE VOLTAGE; NON-VOLATILE MEMORIES; PENTACENE LAYERS; PENTACENES; PLASMA IRRADIATIONS; POLY(VINYLIDENE FLUORIDE-TRIFLUOROETHYLENE); POSITIVE VOLTAGE; SURFACE MODIFICATION; TURN ON VOLTAGE; ULTRAVIOLET-OZONE; UNDERLYING MECHANISM;

CARRIER MOBILITY; ELECTRIC FIELDS; FERROELECTRICITY; FIELD EFFECT TRANSISTORS; MORPHOLOGY; ORGANIC FIELD EFFECT TRANSISTORS; OZONE; POLYMERS;

SURFACE MORPHOLOGY;

EID: 79551670772 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3544308 Document Type: Article

Times cited : (42)

References (21)

1
- 35348846979
- 0036-8075, 10.1126/science.246.4936.1400
- J. F. Scott and C. A. P. de Araujo, Science 0036-8075 246, 1400 (1989). 10.1126/science.246.4936.1400
- (1989) Science , vol.246 , pp. 1400
- Scott, J.F.¹ De Araujo, C.A.P.²

2
- 0030080525
- 0021-4922, 10.1143/JJAP.35.1516
- T. Sumi, Y. Judai, K. Hirano, T. Ito, T. Mikawa, M. Takeo, M. Azuma, S. Hayashi, Y. Uemoto, K. Arita, T. Nasu, Y. Nagano, A. Inoue, A. Matsuda, E. Fuji, Y. Shimada, and T. Otsuki, Jpn. J. Appl. Phys., Part 1 0021-4922 35, 1516 (1996). 10.1143/JJAP.35.1516
- (1996) Jpn. J. Appl. Phys., Part 1 , vol.35 , pp. 1516
- Sumi, T.¹ Judai, Y.² Hirano, K.³ Ito, T.⁴ Mikawa, T.⁵ Takeo, M.⁶ Azuma, M.⁷ Hayashi, S.⁸ Uemoto, Y.⁹ Arita, K.¹⁰ Nasu, T.¹¹ Nagano, Y.¹² Inoue, A.¹³ Matsuda, A.¹⁴ Fuji, E.¹⁵ Shimada, Y.¹⁶ Otsuki, T.¹⁷

3
- 77649207781
- 0935-9648, 10.1002/adma.200900759
- R. C. G. Naber, K. Asadi, P. W. M. Blom, D. M. de Leeuw, and B. de Boer, Adv. Mater. 0935-9648 22, 933 (2010). 10.1002/adma.200900759
- (2010) Adv. Mater. , vol.22 , pp. 933
- Naber, R.C.G.¹ Asadi, K.² Blom, P.W.M.³ De Leeuw, D.M.⁴ De Boer, B.⁵

4
- 0029290956
- 0028-0836, 10.1038/374627a0
- C. A. P. de Araujo, J. D. Cuchiaro, L. D. Mcmillan, M. C. Scott, and J. F. Scott, Nature (London) 0028-0836 374, 627 (1995). 10.1038/374627a0
- (1995) Nature (London) , vol.374 , pp. 627
- De Araujo, C.A.P.¹ Cuchiaro, J.D.² McMillan, L.D.³ Scott, M.C.⁴ Scott, J.F.⁵

5
- 0030940516
- Ferroelectric field effect transistor based on epitaxial perovskite heterostructures
- DOI 10.1126/science.276.5310.238
- S. Mathews, R. Ramesh, T. Venkatesan, and J. Benedetto, Science 0036-8075 276, 238 (1997). 10.1126/science.276.5310.238 (Pubitemid 27172677)
- (1997) Science , vol.276 , Issue.5310 , pp. 238-240
- Mathews, S.¹ Ramesh, R.² Venkatesan, T.³ Benedetto, J.⁴

6
- 4944260812
- 0003-6951, 10.1063/1.1788887
- K. N. N. Unni, R. de Bettingnies, S. Dabos-Seignon, and J. -M. Nunzi, Appl. Phys. Lett. 0003-6951 85, 1823 (2004). 10.1063/1.1788887
- (2004) Appl. Phys. Lett. , vol.85 , pp. 1823
- Unni, K.N.N.¹ De Bettingnies, R.² Dabos-Seignon, S.³ Nunzi, J.-M.⁴

7
- 13444305307
- Memory performance and retention of an all-organic ferroelectric-like memory transistor
- DOI 10.1109/LED.2004.841186
- R. Schroeder, L. A. Majewski, M. Voigt, and M. Grell, IEEE Electron Device Lett. 0741-3106 26, 69 (2005). 10.1109/LED.2004.841186 (Pubitemid 40205839)
- (2005) IEEE Electron Device Letters , vol.26 , Issue.2 , pp. 69-71
- Schroeder, R.¹ Majewski, L.A.² Voigt, M.³ Grell, M.⁴

8
- 34248538000
- Effects of polar functional groups and roughness topography of polymer gate dielectric layers on pentacene field-effect transistors
- DOI 10.1016/j.orgel.2006.12.007, PII S1566119906001716
- K. Shin, S. Y. Yang, C. Yang, H. Jeon, and C. E. Park, Org. Electron. 1566-1199 8, 336 (2007). 10.1016/j.orgel.2006.12.007 (Pubitemid 46755044)
- (2007) Organic Electronics: physics, materials, applications , vol.8 , Issue.4 , pp. 336-342
- Shin, K.¹ Yang, S.Y.² Yang, C.³ Jeon, H.⁴ Park, C.E.⁵

9
- 67650726523
- 1566-1199, 10.1016/j.orgel.2009.06.001
- X. -H. Zhang, S. P. Tiwari, and B. Kippelen, Org. Electron. 1566-1199 10, 1133 (2009). 10.1016/j.orgel.2009.06.001
- (2009) Org. Electron. , vol.10 , pp. 1133
- Zhang, X.-H.¹ Tiwari, S.P.² Kippelen, B.³

10
- 21344435555
- High-mobility pentacene organic field-effect transistors with a high-dielectric-constant fluorinated polymer film gate dielectric
- DOI 10.1063/1.1946190, 242902
- B. Stadlober, M. Zirkl, M. Beutl, G. Leising, S. Bauer-Gogonea, and S. Bauer, Appl. Phys. Lett. 0003-6951 86, 242902 (2005). 10.1063/1.1946190 (Pubitemid 40908737)
- (2005) Applied Physics Letters , vol.86 , Issue.24 , pp. 1-3
- Stadlober, B.¹ Zirkl, M.² Beutl, M.³ Leising, G.⁴ Bauer-Gogonea, S.⁵ Bauer, S.⁶

11
- 0009808117
- 0003-6951, 10.1063/1.119781
- C. T. Black, C. Farrell, and T. J. Licata, Appl. Phys. Lett. 0003-6951 71, 2041 (1997). 10.1063/1.119781
- (1997) Appl. Phys. Lett. , vol.71 , pp. 2041
- Black, C.T.¹ Farrell, C.² Licata, T.J.³

12
- 34547838670
- Superhydrophobic modification of gate dielectrics for densely packed pentacene thin film transistors
- DOI 10.1063/1.2767779
- C. S. Kim, S. J. Jo, J. B. Kim, S. Y. Ryu, J. H. Noh, H. K. Baik, S. J. Lee, and Y. S. Kim, Appl. Phys. Lett. 0003-6951 91, 063503 (2007). 10.1063/1.2767779 (Pubitemid 47247199)
- (2007) Applied Physics Letters , vol.91 , Issue.6 , pp. 063503
- Kim, C.S.¹ Jo, S.J.² Kim, J.B.³ Ryu, S.Y.⁴ Noh, J.H.⁵ Baik, H.K.⁶ Lee, S.J.⁷ Kim, Y.S.⁸

13
- 20744459761
- Threshold voltage shift in organic field effect transistors by dipole monolayers on the gate insulator
- DOI 10.1063/1.1810205
- K. P. Pernstich, S. Haas, D. Oberhoff, C. Goldmann, D. J. Gundlach, B. Batlogg, A. N. Rashid, and G. Schitter, J. Appl. Phys. 0021-8979 96, 6431 (2004). 10.1063/1.1810205 (Pubitemid 44938224)
- (2004) Journal of Applied Physics , vol.96 , Issue.11 , pp. 6431-6438
- Pernstich, K.P.¹ Haas, S.² Oberhoff, D.³ Goldmann, C.⁴ Gundlach, D.J.⁵ Batlogg, B.⁶ Rashid, A.N.⁷ Schitter, G.⁸

14
- 2342639588
- 1476-1122, 10.1038/nmat1105
- S. Kobayashi, T. Nishikawa, T. Takenobu, S. Mori, T. Shimoda, T. Mitani, H. Shimotani, N. Yoshimoto, S. Ogawa, and Y. Iwasa, Nature Mater. 1476-1122 3, 317 (2004). 10.1038/nmat1105
- (2004) Nature Mater. , vol.3 , pp. 317
- Kobayashi, S.¹ Nishikawa, T.² Takenobu, T.³ Mori, S.⁴ Shimoda, T.⁵ Mitani, T.⁶ Shimotani, H.⁷ Yoshimoto, N.⁸ Ogawa, S.⁹ Iwasa, Y.¹⁰

15
- 47749137808
- 0021-8979, 10.1063/1.2951905
- S. J. Han, J. -H. Kim, J. W. Kim, C. -K. Min, S. -H. Hong, D. -H. Kim, K. -H. Baek, G. -H. Kim, L. -M. Do, and Y. Park, J. Appl. Phys. 0021-8979 104, 013715 (2008). 10.1063/1.2951905
- (2008) J. Appl. Phys. , vol.104 , pp. 013715
- Han, S.J.¹ Kim, J.-H.² Kim, J.W.³ Min, C.-K.⁴ Hong, S.-H.⁵ Kim, D.-H.⁶ Baek, K.-H.⁷ Kim, G.-H.⁸ Do, L.-M.⁹ Park, Y.¹⁰

16
- 0022112335
- 0021-4922, 10.1143/JJAP.24.L661
- T. Furukawa, H. Matsuzaki, M. Shiina, and Y. Tajitsu, Jpn. J. Appl. Phys., Part 2 0021-4922 24, L661 (1985). 10.1143/JJAP.24.L661
- (1985) Jpn. J. Appl. Phys., Part 2 , vol.24 , pp. 661
- Furukawa, T.¹ Matsuzaki, H.² Shiina, M.³ Tajitsu, Y.⁴

17
- 67349223946
- 0045-6535, 10.1016/j.chemosphere.2009.02.027
- S. -H. Lin, K. -L. Tung, H. -W. Chang, and K. -R. Lee, Chemosphere 0045-6535 75, 1410 (2009). 10.1016/j.chemosphere.2009.02.027
- (2009) Chemosphere , vol.75 , pp. 1410
- Lin, S.-H.¹ Tung, K.-L.² Chang, H.-W.³ Lee, K.-R.⁴

18
- 34547889142
- Importance of the functional group density of a polymeric gate insulator for organic thin-film-transistors
- DOI 10.1143/JJAP.46.385
- J. -H. Bae, J. Kim, W. -H. Kim, and S. -D. Lee, Jpn. J. Appl. Phys., Part 1 0021-4922 46, 385 (2007). 10.1143/JJAP.46.385 (Pubitemid 47260391)
- (2007) Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers , vol.46 , Issue.1 , pp. 385-389
- Bae, J.-H.¹ Kim, J.² Kim, W.-H.³ Lee, S.-D.⁴

19
- 51149222086
- 0169-4332, 10.1016/j.apsusc.2007.12.067
- J. X. Tang, C. S. Lee, M. Y. Chan, and S. T. Lee, Appl. Surf. Sci. 0169-4332 254, 7688 (2008). 10.1016/j.apsusc.2007.12.067
- (2008) Appl. Surf. Sci. , vol.254 , pp. 7688
- Tang, J.X.¹ Lee, C.S.² Chan, M.Y.³ Lee, S.T.⁴

20
- 84956114841
- 0734-2101, 10.1116/1.573115
- J. R. Vig, J. Vac. Sci. Technol. A 0734-2101 3, 1027 (1985). 10.1116/1.573115
- (1985) J. Vac. Sci. Technol. A , vol.3 , pp. 1027
- Vig, J.R.¹

21
- 29144453806
- 0015-0193.
- F. Xia, H. S. Xu, B. Razavi, Z. -Y. Cheng, and Q. M. Zhang, Ferroelectrics 0015-0193 273, 377 (2002).
- (2002) Ferroelectrics , vol.273 , pp. 377
- Xia, F.¹ Xu, H.S.² Razavi, B.³ Cheng, Z.-Y.⁴ Zhang, Q.M.⁵

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