Improved device performance of organic crystal field-effect transistors fabricated on friction-transferred substrates

Journal of Nanoscience and Nanotechnology

Volumn 9, Issue 11, 2009, Pages 6271-6276

  Yamao, Takeshi ^a   Akagami, Hiroshi ^a   Nishimoto, Yoshihiro ^a   Hotta, Shu ^a   Yoshida, Yuji ^b  

^a KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Friction transfer technique; Liquid phase crystal growth; Organic field effect transistor; Thiophene phenylene co oligomer

Indexed keywords

BOTTOM-CONTACT; DEVICE PERFORMANCE; DRAIN VOLTAGE; ELECTRICAL CONTACTS; FRICTION-TRANSFER TECHNIQUE; INSULATOR LAYER; LIQUID PHASE; LIQUID-PHASE CRYSTAL GROWTH; METAL ELECTRODES; ORGANIC CRYSTAL; ORGANIC FIELD-EFFECT TRANSISTOR; ORGANIC FIELD-EFFECT TRANSISTORS; SILICON DIOXIDE; SILICON SUBSTRATES; THIN LAYERS; THIOPHENE/PHENYLENE CO-OLIGOMER; TRANSFERRED SUBSTRATE;

CARRIER MOBILITY; CRYSTAL GROWTH; CRYSTALLIZATION; DRAIN CURRENT; ELECTRODES; FRICTION; GRAIN BOUNDARIES; LIQUIDS; SILICA; SINGLE CRYSTALS; SUBSTRATES; TRIBOLOGY;

FIELD EFFECT TRANSISTORS;

EID: 70350320560     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2009.1360     Document Type: Article

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