Pentacene TFT with reduced threshold voltage using PMMA-co-MAA/ sol-gel-derived TiO2 composite insulator

IEEE Electron Device Letters

Volumn 30, Issue 11, 2009, Pages 1146-1148

  Park, Jaehoon ^a   Park, Bong June ^b   Choi, Hyoung Jin ^b   Kim, Youngmin ^c   Choi, Jong Sun ^c  

^a Seoul National University   (South Korea)

^b Inha University   (South Korea)

^c Hong Ik University   (South Korea)

Author keywords

Insulator; Organic thin film transistors (TFTs) (OTFTs); Sol gel; TiO2

Indexed keywords

CHARACTERISTIC PARAMETER; COMPOSITE INSULATORS; GATE-LEAKAGE CURRENT; INSULATOR; ORGANIC THIN-FILM TRANSISTORS (TFTS) (OTFTS); PENTACENE THIN-FILM TRANSISTORS; PENTACENES; POLY(METHYLMETHACRYLATE-CO-METHACRYLIC ACID); TIO; TIO2;

ELECTRIC INSULATORS; GELATION; GELS; INSULATING MATERIALS; SEMICONDUCTING ORGANIC COMPOUNDS; SOL-GEL PROCESS; SOL-GELS; SOLS; THIN FILM DEVICES; THRESHOLD VOLTAGE;

THIN FILM TRANSISTORS;

EID: 70350622582     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2031256     Document Type: Article

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