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Volumn 1, Issue , 2004, Pages 601-609

Process integration of 3D chip stack with vertical interconnection

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION; CURRENT DENSITY; ELECTROPLATING; HEAT LOSSES; MICROPROCESSOR CHIPS; PROJECT MANAGEMENT;

EID: 10444221697     PISSN: 05695503     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (94)

References (22)
  • 1
    • 0035300622 scopus 로고    scopus 로고
    • Current status of research and development for three-dimensional chip stack technology
    • Takahashi, K. et al. "Current Status of Research and Development for Three-Dimensional Chip Stack Technology," Jpn. J. Appl. Phys., Vol. 40, No. 4B (2001), pp. 3032-3037.
    • (2001) Jpn. J. Appl. Phys. , vol.40 , Issue.4 B , pp. 3032-3037
    • Takahashi, K.1
  • 2
    • 0041610704 scopus 로고
    • Three-dimensional integration technology based on wafer bonding technique using micro-bumps
    • Osaka, Japan, August
    • Matsumoto, T. et al., "Three-Dimensional Integration Technology Based on Wafer Bonding Technique Using Micro-Bumps," Ext. Abstr. 1995 Int. Conf. Solid State Devices Mater., Osaka, Japan, August 1995, pp. 1073-1074.
    • (1995) Ext. Abstr. 1995 Int. Conf. Solid State Devices Mater. , pp. 1073-1074
    • Matsumoto, T.1
  • 3
    • 0031270573 scopus 로고    scopus 로고
    • Three dimensional metallization for vertically integrated circuits
    • Ramm, P. et al., "Three dimensional metallization for vertically integrated circuits," Microelectron. Eng., Vol. 37/38 (1997), pp. 39-47.
    • (1997) Microelectron. Eng. , vol.37-38 , pp. 39-47
    • Ramm, P.1
  • 5
    • 0043113510 scopus 로고    scopus 로고
    • 128Mbit NAND flash memory by chip-on-chip technology with Cu through plug
    • Tokyo, Japan, April
    • Sasaki, K. et al., "128Mbit NAND Flash Memory by Chip-on-Chip Technology with Cu Through Plug," 2001 Int. Conf. Electron. Packaging Proc., Tokyo, Japan, April 2001, pp. 39-43.
    • (2001) 2001 Int. Conf. Electron. Packaging Proc. , pp. 39-43
    • Sasaki, K.1
  • 6
    • 0038350796 scopus 로고    scopus 로고
    • IC stacking technology using fine pitch, nanoscale through silicon vias
    • New Orleans, LA, May
    • Spiesshoefer, S. et al., "IC Stacking Technology using Fine Pitch, Nanoscale through Silicon Vias," Proc. 53rd Electron. Components and Technol. Conf., New Orleans, LA, May 2003, pp. 631-633.
    • (2003) Proc. 53rd Electron. Components and Technol. Conf. , pp. 631-633
    • Spiesshoefer, S.1
  • 7
    • 85009535675 scopus 로고    scopus 로고
    • Copper via filling electrodeposition of high aspect ratio through chip electrodes used for the three dimensional packaging
    • [in Japanese]
    • Kondo, K. et al., "Copper Via Filling Electrodeposition of High Aspect Ratio Through Chip Electrodes Used for the Three Dimensional Packaging," J. Jpn. Inst. Electron. Packaging, Vol. 6, No. 7 (2003), pp. 596-601. [in Japanese]
    • (2003) J. Jpn. Inst. Electron. Packaging , vol.6 , Issue.7 , pp. 596-601
    • Kondo, K.1
  • 8
    • 0038608067 scopus 로고    scopus 로고
    • High-aspect-ratio copper via filling used for three-dimensional chip stacking
    • Sun, J-J. et al., "High-Aspect-Ratio Copper Via Filling Used for Three-Dimensional Chip Stacking," J. Electrochem. Soc., Vol. 150, No. 6 (2003), pp. G355-G358.
    • (2003) J. Electrochem. Soc. , vol.150 , Issue.6
    • Sun, J.-J.1
  • 9
    • 10444275470 scopus 로고    scopus 로고
    • Copper electrodeposition of high-aspect-ratio vias for three dimensional packaging
    • Tokyo, September, G4-3
    • Kondo, K. et al., "Copper Electrodeposition of High-Aspect-Ratio Vias for Three Dimensional Packaging," Ext. Abstr. 2003 Int. Conf. Solid State Devices Mater., Tokyo, September 2003, G4-3, pp. 380-381.
    • (2003) Ext. Abstr. 2003 Int. Conf. Solid State Devices Mater. , pp. 380-381
    • Kondo, K.1
  • 10
    • 10444287764 scopus 로고    scopus 로고
    • Time shortening of through electrode electrodeposition for three dimensional packaging
    • Osaka, Japan, October. [in Japanese]
    • Kondo, K. et al., "Time shortening of through electrode electrodeposition for three dimensional packaging," Proc. 13th Microelectron. Symp. (MES 2003), Osaka, Japan, October 2003, pp. 256-259. [in Japanese]
    • (2003) Proc. 13th Microelectron. Symp. (MES 2003) , pp. 256-259
    • Kondo, K.1
  • 12
    • 2042442448 scopus 로고    scopus 로고
    • Role of additives for copper damascene electrodeposition-experimental study on inhibition and acceleration effect
    • submitted to
    • Kondo, K. et al., "Role of Additives for Copper Damascene Electrodeposition-Experimental Study on Inhibition and Acceleration Effect," submitted to J. Electrochem. Soc.
    • J. Electrochem. Soc.
    • Kondo, K.1
  • 13
    • 10444229898 scopus 로고    scopus 로고
    • High-speed Cu-CMP for three-dimensional chip stacking with Si through-via
    • Tokyo, Japan, Sep.
    • Y. Taguchi, et al. "High-speed Cu-CMP for Three-dimensional Chip Stacking with Si Through-via," Ext. Abstr. ADMETA 2003, Tokyo, Japan, Sep. 2003, pp. 50-51.
    • (2003) Ext. Abstr. ADMETA 2003 , pp. 50-51
    • Taguchi, Y.1
  • 16
    • 0034835759 scopus 로고    scopus 로고
    • Thermal characterization of bare-die stacked modules with Cu through-vias
    • Orlando, FL, May
    • Yamaji, Y. et al., "Thermal Characterization of Bare-die Stacked Modules with Cu through-vias," Proc. 51st Electron. Components and Technol. Conf., Orlando, FL, May 2001, pp. 730-737.
    • (2001) Proc. 51st Electron. Components and Technol. Conf. , pp. 730-737
    • Yamaji, Y.1
  • 17
    • 10444224175 scopus 로고    scopus 로고
    • Thermal analysis of self-heating effect in three dimensional LSI
    • Nagoya, Japan, Sep.
    • Nakamura, T. et al., "Thermal Analysis of Self-Heating Effect in Three Dimensional LSI," Ext. Abstr. 2003 Int. Conf. Solid State Devices and Mater., Nagoya, Japan, Sep. 2002, pp. 316-317.
    • (2002) Ext. Abstr. 2003 Int. Conf. Solid State Devices and Mater. , pp. 316-317
    • Nakamura, T.1
  • 18
    • 17044400915 scopus 로고    scopus 로고
    • Application of a global-local random-walk algorithm for thermal analysis of 3D integrated circuits
    • Kalyanasundharam, J. et al., "Application of a Global-local Random-walk Algorithm for Thermal Analysis of 3D Integrated Circuits," Conf. Proc., Adv. Metallization Conf. 2002 (AMC2002), pp. 59-65.
    • Conf. Proc., Adv. Metallization Conf. 2002 (AMC2002) , pp. 59-65
    • Kalyanasundharam, J.1
  • 19
    • 0019563707 scopus 로고
    • High-performance heat sinking for VLSI
    • Tuckerman, D. B. et al., "High-Performance Heat Sinking for VLSI," IEEE Electron Device Lett., Vol. EDL-2, No. 5 (1981), pp. 126-129.
    • (1981) IEEE Electron Device Lett. , vol.EDL-2 , Issue.5 , pp. 126-129
    • Tuckerman, D.B.1
  • 20
    • 0033717508 scopus 로고    scopus 로고
    • Development of three-dimensional integration technology for highly parallel image-processing chip
    • Lee, K.W, et al. "Development of Three-Dimensional Integration Technology for Highly Parallel Image-Processing Chip," Jpn. J. Appl. Phys., Vol. 39, Part 1, No. 4B (2000), pp. 2473-2477.
    • (2000) Jpn. J. Appl. Phys. , vol.39 , Issue.4 PART 1 AND B , pp. 2473-2477
    • Lee, K.W.1
  • 21
    • 10444245178 scopus 로고    scopus 로고
    • High performance, low power three-dimensional integrated circuits for next generation technologies
    • Nagoya, Japan, September
    • McIlrath, L. G., "High Performance, Low Power Three-Dimensional Integrated Circuits for Next Generation Technologies," Ext. Abstr. 2002 Int. Conf. Solid State Devices and Mater., Nagoya, Japan, September 2002, pp. 310-311.
    • (2002) Ext. Abstr. 2002 Int. Conf. Solid State Devices and Mater. , pp. 310-311
    • McIlrath, L.G.1
  • 22
    • 10444270123 scopus 로고    scopus 로고
    • High-performance vertical interconnection for high-density 3D chip stacking package
    • submitted to, Las Vegas, NV, Jun.
    • Umemoto, M. et al., "High-Performance Vertical Interconnection for high-density 3D Chip Stacking Package," submitted to 54th Electron. Components and Technol. Conf., Las Vegas, NV, Jun. 2004.
    • (2004) 54th Electron. Components and Technol. Conf.
    • Umemoto, M.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.