The electron-hole bilayer tunnel FET

Solid-State Electronics

Volumn 74, Issue , 2012, Pages 85-90

  Lattanzio, Livio ^a   De Michielis, Luca ^a   Ionescu, Adrian M ^a  

^a EPFL   (Switzerland)

Author keywords

Band to band tunneling; EHBTFET; Electron hole bilayer; Field effect transistor; Logic devices; Silicon germanium; Subthreshold slope; Tunnel FET; Tunnel transistor

Indexed keywords

BAND TO BAND TUNNELING; EHBTFET; ELECTRON-HOLE BILAYERS; SILICON GERMANIUM; SUBTHRESHOLD SLOPE; TUNNEL FET; TUNNEL TRANSISTORS;

FIELD EFFECT TRANSISTORS; GERMANIUM; LOGIC DEVICES; SILICON;

ELECTRONS;

EID: 84861897557     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2012.04.016     Document Type: Conference Paper

References (18)

1. Q. Zhang, W. Zhao, and A. Seabaugh Low-subthreshold-swing tunnel transistors IEEE Electron Device Lett 27 4 2006 297 300
2. W.Y. Choi, B.G. Park, and J.D. Lee Tunneling field-effect transistors (TFETs) with subthreshold swing (SS) less than 60 mV/dec IEEE Electron Device Lett 28 8 2007 743 745
3. Krishnamohan T, Kim D, Raghunathan S et al. Double-gate strained-Ge heterostructure tunneling FET (TFET) with record high drive currents and <60 mV/dec subthreshold slope. In: IEEE international electron devices meeting 2008, technical digest, vol. 45; 2008. p. 947-9.
4. G. Fiori, and G. Iannaccone Ultralow-voltage bilayer graphene tunnel FET Electron Device Lett, IEEE 30 10 2009 1096 1098
5. M. Prunnila, and J. Ahopelto Two sub-band conductivity of Si quantum well Physica E: Low-Dimens Syst Nanostruct 32 1-2 2006 281 284 (SPEC. ISS.)
6. M. Prunnila, S.J. Laakso, and J.M. Kivioja Electrons and holes in Si quantum well: a room-temperature transport and drag resistance study Appl Phys Lett 93 11 2008
7. J. Knoch, S. Mantl, and J. Appenzeller Impact of the dimensionality on the performance of tunneling FETs: bulk versus one-dimensional devices Solid-State Electron 51 4 2007 572 578 (SPEC. ISS.)
8. Sentaurus User Guide, E-2010.12.
9. E.O. Kane Theory of tunneling J Appl Phys 32 1 1961 83 91
10. A. Schenk A model for the field and temperature-dependence of Shockley-Read-Hall lifetimes in silicon Solid-State Electron 35 11 1992 1585 1596
11. M.G. Ancona, and H.F. Tiersten Macroscopic physics of the silicon inversion layer Phys Rev B 35 15 1987 7959 7965
12. R. Asra, K.V.R.M. Murali, and V.R. Rao A binary tunnel field effect transistor with a steep sub-threshold swing and increased on current Jpn J Appl Phys 49 12 2010
13. K. Boucart, and A.M. Ionescu A new definition of threshold voltage in tunnel FETs Solid-State Electron 52 9 2008 1318 1323
14. B. Zhang, Z. Li, and S. Hu Field enhancement for dielectric layer of high-voltage devices on silicon on insulator IEEE Trans Electron Devices 56 10 2009 2327 2334
15. V. Jovanović, T. Suligoj, and M. Poljak Ultra-high aspect-ratio FinFET technology Solid-State Electron 54 9 2010 870 876
16. G. Hellings, G. Eneman, and R. Krom Electrical TCAD simulations of a germanium pMOSFET technology Electron Devices, IEEE Trans 57 10 2010 2539 2546
17. A.S. Verhulst, W.G. Vandenberghe, and K. Maex Tunnel field-effect transistor without gate-drain overlap Appl Phys Lett 91 5 2007
18. L. Lattanzio, L. De Michielis, and A.M. Ionescu Complementary germanium electron-hole bilayer tunnel FET for Sub-0.5-V operation Electron Device Lett, IEEE 33 2 2012 167 169