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Volumn 32, Issue 1-2 SPEC. ISS., 2006, Pages 281-284

Two sub-band conductivity of Si quantum well

Author keywords

Bi layer; Localization; Resonant coupling; Silicon; Two dimensional electron gas

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; ELECTRON SCATTERING; SEMICONDUCTING SILICON; SILICA;

EID: 33646179633     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2005.12.093     Document Type: Article
Times cited : (8)

References (11)
  • 4
    • 33646187944 scopus 로고    scopus 로고
    • The obscured behavior of the σ contours in the vicinity of the threshold and below the symmetric bias line is an experimental artefact explained in Ref. [3].


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.