A combined etching process toward robust superhydrophobic SiC surfaces

Nanotechnology

Volumn 23, Issue 25, 2012, Pages

  Liu, Yan ^a   Lin, Wei ^a   Lin, Ziyin ^a   Xiu, Yonghao ^a   Wong, C P ^a,b  

^a Georgia Institute of Technology   (United States)

^b CHINESE UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

BASIC SOLUTIONS; BIOSENSOR APPLICATIONS; ETCHING PROCESS; FUNCTIONALIZED; GROUND PLANES; HUMIDITY CHAMBERS; LONG TERM STABILITY; MICRO-FLUID; PH VALUE; PHOTOLUMINESCENCE INTENSITIES; POROUS SIC; SUPERHYDROPHOBIC; SUPERHYDROPHOBICITY; TRICHLOROSILANES;

BIOSENSORS; CONTACT ANGLE; HYDROPHOBICITY; PH EFFECTS; PLATINUM; REACTIVE ION ETCHING; SURFACE ROUGHNESS;

SILICON CARBIDE;

INORGANIC COMPOUND; LUMINESCENT AGENT; NANOMATERIAL; PLATINUM; SILICON CARBIDE; SILICON DERIVATIVE; WATER;

ARTICLE; CHEMICAL PHENOMENA; CHEMISTRY; HEAT; METHODOLOGY; NANOTECHNOLOGY; POROSITY;

CARBON COMPOUNDS, INORGANIC; HOT TEMPERATURE; HYDROPHOBIC AND HYDROPHILIC INTERACTIONS; LUMINESCENT AGENTS; NANOSTRUCTURES; NANOTECHNOLOGY; PLATINUM; POROSITY; SILICON COMPOUNDS; WATER;

EID: 84861873895     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/23/25/255703     Document Type: Article

References (31)

1. Zhuang D and Edgar J H 2005 Mater. Sci. Eng. R 48 1 (Pubitemid 40211034)
2. Wu K H, Fang Y K, Hsieh W T, Ho J J, Lin W J and Hwang J D 1998 Electron Lett. 34 2243
3. Connolly E J, Timmer B, Pham H T M, Groeneweg J, Sarro P M, Olthuis W and French P J 2005 Sensors Actuators B 109 44
4. Shwop J E 1962 Advisory Group on Electron Tubes vol 1 (New York: Engineering Publishers)
5. Rosso M, Arafat A, Schroen K, Giesbers M, Roper C S, Maboudian R and Zuilhof H 2008 Langmuir 24 4007 (Pubitemid 351569004)
6. Xiu Y H, Zhang S, Yelundur V, Rohatgi A, Hess D W and Wong C P 2008 Langmuir 24 10421
7. Lafuma A and Quere D 2003 Nature Mater. 2 457
8. Lin Z Y, Liu Y and Wong C P 2010 Langmuir 26 16110
9. Xiu Y H, Zhu L B, Hess D W and Wong C P 2007 Nano Lett. 7 3388 (Pubitemid 350216033)
10. Liu Y, Xiu Y H, Hess D W and Wong C P 2010 Langmuir 26 8908
11. Liu Y, Xiu Y H, Hess D W and Wong C P 2010 Proc. IEEE 60th Electronic Components Technology Conf. p 1719
12. Liu Y, Das A, Xu S, Lin Z Y, Xu C, Wang Z L, Rohatgi A and Wong C P 2012 Adv. Energy Mater. 2 247
13. Niu J J and Wang J N 2009 J. Phys. Chem. B 113 2909
14. Niu J J, Wang J N and Xu Q F 2008 Langmuir 24 6918
15. Wang J J, Lambers E S, Pearton S J, Ostling M, Zetterling C M, Grow J M, Ren F and Shul R J 1998 Solid State Electron 42 2283
16. Boukezzata A et al 2010 Appl. Surf. Sci. 256 5592
17. Kato M, Ichimura M, Arai E and Ramasamy P 2003 Jpn. J. Appl. Phys. 42 4233
18. Bourenane K, Keffous A, Nezzal G, Boukezzata A and Naama S 2007 Surf. Interface Anal. 39 392 (Pubitemid 46659565)
19. Chang W H, Schellin B, Obermeier E and Huang Y C 2006 J. Microelectromech. Syst. 15 548 (Pubitemid 43891350)
20. Rittenhouse T L, Bohn P W and Adesida I 2003 Solid State Commun. 126 245
21. Chuah L S, Hassan Z and Abu Hassan H 2007 Optoelectron. Adv. Mater. 1 400
22. Diaz D J, Williamson T L, Guo X Y, Sood A and Bohn P W 2006 Thin Solid Films 514 120 (Pubitemid 44015866)
23. Cao L H, Li B H and Zhao J H 1998 J. Electrochem. Soc. 145 3609
24. Yih P H, Saxena V and Steckl A 1997 J. Phys. Status Solidi b 202 605
25. Bardwell J A, Webb J B, Tang H, Fraser J and Moisa S 2001 J. Appl. Phys. 89 4142
26. Cho H, Auh K H, Han J, Shul R J, Donovan S M, Abernathy C R, Lambers E S, Ren F and Pearton S J 1999 J. Electron Mater. 28 290
27. Scofield J D, Bletzinger P and Ganguly B N 1998 Appl. Phys. Lett. 73 76 (Pubitemid 128677885)
28. Camara N and Zekentes K 2002 Solid State Electron 46 1959 (Pubitemid 35214335)
29. Fan J Y, Wu X L and Chu P K 2006 Prog. Mater. Sci. 51 983 (Pubitemid 44540312)
30. Botsoa J, Bluet J M, Lysenko V, Marty O, Barbier D and Guillot G 2007 J. Appl. Phys. 102 083526 (Pubitemid 350025640)
31. Petrovakoch V, Sreseli O, Polisski G, Kovalev D, Muschik T and Koch F 1995 Thin Solid Films 255 107