Electrochemical etching of n-Type 6H-SiC without UV illumination

Journal of Microelectromechanical Systems

Volumn 15, Issue 3, 2006, Pages 548-552

  Chang, Wei Hsu ^a,b   Schellin, Bernt ^c   Obermeier, Ernst ^c   Huang, Yu Chung ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b RICHTEK TECHNOLOGY CORPORATION   (Taiwan)

^c TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

Bulk micromachining; Electrochemical etching; N type 6H SiC; Porous 6H SiC

Indexed keywords

CURRENT DENSITY; ELECTROCHEMISTRY; ELECTROLYTES; ETCHING; MICROMACHINING; OPTIMIZATION; OXIDATION; PORE SIZE; ULTRAVIOLET RADIATION;

BULK MICROMACHINING; DEEP CIRCULAR CAVITIES; ELECTROCHEMICAL ETCHING; THERMAL OXIDATION PROCESS;

SILICON CARBIDE;

EID: 33745167329     PISSN: 10577157     EISSN: None     Source Type: Journal    
DOI: 10.1109/JMEMS.2006.872225     Document Type: Article

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