Study of the reactive ion etching of 6H-SiC and 4H-SiC in SF6/Ar plasmas by optical emission spectroscopy and laser interferometry

Solid-State Electronics

Volumn 46, Issue 11, 2002, Pages 1959-1963

  Camara, N ^a   Zekentes, K ^a  

^a INSTITUTE OF COMPUTER SCIENCE   (Greece)

Author keywords

Laser interferometry; Optical emission spectroscopy; Reactive ion etching; Silicon carbide

Indexed keywords

ELECTRON CYCLOTRON RESONANCE; INTERFEROMETRY; REACTIVE ION ETCHING; SILICON CARBIDE; SPECTROSCOPIC ANALYSIS; SURFACE ROUGHNESS;

LASER INTERFEROMETRY;

SCHOTTKY BARRIER DIODES;

EID: 0036838409     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00129-6     Document Type: Conference Paper

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