Structural and optical properties of thin films porous amorphous silicon carbide formed by Ag-assisted photochemical etching

Applied Surface Science

Volumn 256, Issue 18, 2010, Pages 5592-5595

  Boukezzata, A ^a   Keffous, A ^a   Cheriet, A ^a   Belkacem, Y ^a   Gabouze, N ^a   Manseri, A ^a   Nezzal, G ^b   Kechouane, M ^b   Bright, A ^b   Guerbous, L ^c   Menari, H ^a  

^a L'Unite de Developpement de la Technologie du Silicium   (Algeria)

^b UNIVERSITY OF SCIENCES AND TECHNOLOGY HOUARI BOUMEDIENE   (Algeria)

^c CENTRE DE RECHERCHE NUCLÉAIRE D ALGER   (Algeria)

Author keywords

Photochemical etching; SEM; Silicon carbide; SIMS; Thin layer

Indexed keywords

AMORPHOUS FILMS; AMORPHOUS MATERIALS; ETCHING; HYDROFLUORIC ACID; INFRARED SPECTROSCOPY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; POROUS SILICON; SCANNING ELECTRON MICROSCOPY; SECONDARY ION MASS SPECTROMETRY; SILICON CARBIDE; THIN FILMS;

D.C. MAGNETRON SPUTTERING; DISSOLUTION MECHANISM; HIGH RESISTIVITY; PHOTOCHEMICAL ETCHING; PHOTOLUMINESCENCE CHARACTERIZATION; STRUCTURAL AND OPTICAL PROPERTIES; THIN LAYERS; THIN METALLIC FILMS;

AMORPHOUS SILICON;

EID: 77953129935     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2010.03.037     Document Type: Article

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