UV-photoassisted etching of GaN in KOH

Journal of Electronic Materials

Volumn 28, Issue 3, 1999, Pages 290-294

  Cho, Hyun ^a   Auh, K H ^b   Han, J ^c   Shul, R J ^c   Donovan, S M ^a   Abernathy, C R ^a   Lambers, E S ^a   Ren, F ^a   Pearton, S J ^a  

^a University of Florida   (United States)

^b Hanyang University   (South Korea)

^c SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ETCHING; GRAIN BOUNDARIES; NITRIDES; PHOTOCHEMICAL REACTIONS; POTASSIUM COMPOUNDS; SEMICONDUCTOR DOPING; STOICHIOMETRY; SURFACE ROUGHNESS;

GALLIUM NITRIDE; POTASSIUM HYDROXIDE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032649246     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-999-0029-7     Document Type: Article

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