High-responsivity porous-SiC thin-film pn junction photodetector

Electronics Letters

Volumn 34, Issue 23, 1998, Pages 2243-2244

  Wu, K H ^a   Fang, Y K ^b   Hsieh, W T ^b   Ho, J J ^b   Lin, W J ^b   Hwang, J D ^c  

^a SOUTHERN TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^c CHUNG CHOU INSTITUTE OF TECHNOLOGY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH TEMPERATURE OPERATIONS; POROUS SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR JUNCTIONS; SILICON CARBIDE; SUBSTRATES; THIN FILMS;

SILICON SUBSTRATE; ULTRAVIOLET IRRADIATION;

PHOTODETECTORS;

EID: 0032202797     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19981547     Document Type: Article

References (9)

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