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Volumn 108, Issue 9, 2010, Pages

Generation of amber III-nitride based light emitting diodes by indium rich InGaN quantum dots with InGaN wetting layer and AlN encapsulation layer

(6) Soh, C B a Liu, W a Chua, S J a,b Ang, S S a Tan, Rayson J N a Chow, S Y a

a INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING (Singapore)

b NATIONAL UNIVERSITY OF SINGAPORE (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE LAYER; ALN; ALN LAYERS; BARRIER LAYERS; BLUE SHIFT; CAPPING LAYER; ENCAPSULATION LAYER; ENERGY BAND PROFILES; III-NITRIDE; INGAN QUANTUM DOTS; INGAN QUANTUM WELLS; INGAN/GAN; INGAN/GAN QUANTUM WELL; INJECTION CURRENTS; INTER-DIFFUSION; LONG WAVELENGTH; METALORGANIC CHEMICAL VAPOR DEPOSITION; QUANTUM WELL; RICH PHASE; WETTING LAYER;

GALLIUM NITRIDE; HETEROJUNCTIONS; INDIUM; LATTICE MISMATCH; LIGHT; LIGHT EMISSION; LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NANOSTRUCTURES; WETTING;

SEMICONDUCTOR QUANTUM WELLS;

EID: 78649287603 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3499618 Document Type: Article

Times cited : (17)

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