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Physical Review B - Condensed Matter and Materials Physics

Volumn 81, Issue 15, 2010, Pages

Continuously tunable band gap in GaN/AlN (0001) superlattices via built-in electric field

(7) Cui, X Y a Carter, D J a,b Fuchs, M c Delley, B d Wei, S H e Freeman, A J f Stampfl, C a

a UNIVERSITY OF SYDNEY (Australia)

b CURTIN UNIVERSITY (Australia)

c FRITZ HABER INSTITUT DER MAX PLANCK GESELLSCHAFT (Germany)

d PAUL SCHERRER INSTITUTE (Switzerland)

e NATIONAL RENEWABLE ENERGY LABORATORY (United States)

f NORTHWESTERN UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 77955371016 PISSN: 10980121 EISSN: 1550235X Source Type: Journal
DOI: 10.1103/PhysRevB.81.155301 Document Type: Article

Times cited : (28)

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