Built-in electric fields and valence band offsets in InN/GaN(0001) superlattices: First-principles investigations

Journal of Applied Physics

Volumn 109, Issue 8, 2011, Pages

  Shieh, C C ^a   Cui, X Y ^a   Delley, B ^b   Stampfl, C ^a  

^a UNIVERSITY OF SYDNEY   (Australia)

^b PAUL SCHERRER INSTITUTE   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

BIAXIAL STRAINS; DEVICE OPTIMIZATION; ELECTRON DENSITY FUNCTIONAL THEORIES; FIRST-PRINCIPLES INVESTIGATIONS; GROWTH CONDITIONS; PIEZOELECTRIC POLARIZATIONS; SPONTANEOUS POLARIZATIONS; VALENCE BAND OFFSETS; WURTZITES;

CALCULATIONS; DENSITY FUNCTIONAL THEORY; ELECTRIC FIELDS; POLARIZATION; SUPERLATTICES; TENSILE STRENGTH; VALENCE BANDS; ZINC SULFIDE;

HETEROJUNCTIONS;

EID: 79955740650     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3573499     Document Type: Article

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