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Applied Physics Letters

Volumn 95, Issue 4, 2009, Pages

Tunability of the piezoelectric fields in strained III-V semiconductors

(6) Garg, R a Hue A a Haxha, V a Migliorato, M A a Hammerschmidt, T b Srivastava, G P c

a UNIVERSITY OF MANCHESTER (United Kingdom)

b UNIVERSITY OF OXFORD (United Kingdom)

c UNIVERSITY OF EXETER (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

AB INITIO; CATION-ANION PAIRS; II-IV SEMICONDUCTORS; INAS/GAAS; LINEAR MODEL; PIEZO-ELECTRIC FIELDS; SEMICONDUCTOR HETEROSTRUCTURES; SIGN REVERSAL; STRAIN DEPENDENCE; TUNABILITIES;

OPTOELECTRONIC DEVICES; PIEZOELECTRICITY; SEMICONDUCTOR QUANTUM WELLS;

PIEZOELECTRIC TRANSDUCERS;

EID: 68249130957 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3194779 Document Type: Article

Times cited : (20)

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